Application and Processes for Sputtered ITO Films

First-principle density functional theory simulations have been performed to predict the electronic structures and optoelectronic properties of ultrathin indium tin oxide (ITO) films, having different thicknesses and temperatures. Our results and analysis led us to predict that the physical properties of ultrathin films of ITO have a direct relation with film thickness rather than temperature. Moreover, we found that a thin film of ITO (1 nm thickness) has a larger absorption coefficient, lower reflectivity, and higher transmittance in the visible light region compared with that of 2 and 3 nm thick ITO films. We suggest that this might be due to the stronger surface strain effect in 1 nm thick ITO film. On the other hand, all three thin films produce similar optical spectra. Finally, excellent agreement was found between the calculated electrical resistivities of the ultrathin film of ITO and that of its experimental data. It is concluded that the electrical resistivities reduce along with the increase in film thickness of ITO because of the short strain length and limited bandgap distributions.

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The correlation between electrical properties and surface plasmonic properties on ITO films with diffraction grating

Optical Review ◽

10.1007/s10043-021-00685-1 ◽

2021 ◽

Author(s):

Noriyuki Hasuike ◽

Nobutoshi Miyamoto ◽

Kohei Funahashi ◽

Minoru Takeda

Keyword(s):

Electrical Properties ◽

Diffraction Grating ◽

Ito Films

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Optical, microstructural and vibrational properties of sol–gel ITO films

Optical Materials ◽

10.1016/j.optmat.2021.110999 ◽

2021 ◽

Vol 114 ◽

pp. 110999

Author(s):

M. Nicolescu ◽

M. Anastasescu ◽

J.M. Calderon-Moreno ◽

A.V. Maraloiu ◽

V.S. Teodorescu ◽

...

Keyword(s):

Sol Gel ◽

Vibrational Properties ◽

Ito Films

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Lamellar and Grain Boundary Models for the Electrical Properties of Post-Oxidized ITO Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.22.615 ◽

1983 ◽

Vol 22 (Part 1, No. 4) ◽

pp. 615-620 ◽

Cited By ~ 18

Author(s):

Mamoru Mizuhashi

Keyword(s):

Electrical Properties ◽

Grain Boundary ◽

Ito Films

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Improving Performance of CIGS Solar Cells by Annealing ITO Thin Films Electrodes

International Journal of Photoenergy ◽

10.1155/2015/483147 ◽

2015 ◽

Vol 2015 ◽

pp. 1-8 ◽

Cited By ~ 4

Author(s):

Chuan Lung Chuang ◽

Ming Wei Chang ◽

Nien Po Chen ◽

Chung Chiang Pan ◽

Chung Ping Liu

Keyword(s):

Thin Films ◽

Optical Properties ◽

Solar Cells ◽

Indium Tin Oxide ◽

Copper Indium Gallium Diselenide ◽

Glass Substrates ◽

Ito Film ◽

Ito Thin Films ◽

Cigs Solar Cells ◽

Ito Films

Indium tin oxide (ITO) thin films were grown on glass substrates by direct current (DC) reactive magnetron sputtering at room temperature. Annealing at the optimal temperature can considerably improve the composition, structure, optical properties, and electrical properties of the ITO film. An ITO sample with a favorable crystalline structure was obtained by annealing in fixed oxygen/argon ratio of 0.03 at 400°C for 30 min. The carrier concentration, mobility, resistivity, band gap, transmission in the visible-light region, and transmission in the near-IR regions of the ITO sample were-1.6E+20 cm−3,2.7E+01 cm2/Vs,1.4E-03 Ohm-cm, 3.2 eV, 89.1%, and 94.7%, respectively. Thus, annealing improved the average transmissions (400–1200 nm) of the ITO film by 16.36%. Moreover, annealing a copper-indium-gallium-diselenide (CIGS) solar cell at 400°C for 30 min in air improved its efficiency by 18.75%. The characteristics of annealing ITO films importantly affect the structural, morphological, electrical, and optical properties of ITO films that are used in solar cells.

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