Transparent conducting zinc-co-doped ITO films prepared by magnetron sputtering

2000 ◽  
Vol 373 (1-2) ◽  
pp. 189-194 ◽  
Author(s):  
Tadatsugu Minami ◽  
Takashi Yamamoto ◽  
Yukinobu Toda ◽  
Toshihiro Miyata
Keyword(s):  
Magnetron Sputtering ◽  
Transparent Conducting ◽  
Co Doped ◽  
Ito Films

Transparent conducting impurity-co-doped ZnO:Al thin films prepared by magnetron sputtering

2001 ◽  
Vol 398-399 ◽  
pp. 53-58 ◽  
Author(s):  
Tadatsugu Minami ◽  
Shingo Suzuki ◽  
Toshihiro Miyata
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conducting ◽  
Co Doped

Transparent Conducting TGZO Thin Films Deposited by DC Magnetron Sputtering at Room Temperature

2010 ◽  
Vol 663-665 ◽  
pp. 1041-1044
Author(s):  
Han Fa Liu ◽  
Hua Fu Zhang
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Room Temperature ◽  
Hexagonal Structure ◽  
X Ray Diffraction ◽  
Dc Magnetron Sputtering ◽  
X Ray ◽  
Transparent Conducting ◽  
Average Transmittance ◽  
Co Doped

Transparent conducting Ti-Ga co-doped zinc oxide (TGZO) thin films with high transmittance, low resistivity were firstly prepared on glass substrate by direct current (DC) magnetron sputtering at room temperature. X-ray diffraction (XRD) and scanning electron microscopy (SEM) show that the TGZO films are polycrystalline with a hexagonal structure and have a preferred orientation along the c-axis perpendicular to the substrate. The lowest resistivity obtained in our experiment is 3.95×10-4Ω⋅cm. The average transmittance of the films is over 92% in the range of 400~760 nm.

Effect of Sputtering Power on the Properties of Transparent Conducting Ti-Al Co-Doped Zine Oxide Films Prepared by DC Magnetron Sputtering

2011 ◽  
Vol 197-198 ◽  
pp. 1739-1743
Author(s):  
Xiao Fei Shi ◽  
Han Fa Liu
Keyword(s):  
Magnetron Sputtering ◽  
Oxide Films ◽  
Visible Range ◽  
Dc Magnetron Sputtering ◽  
Zinc Oxide Films ◽  
Transparent Conducting ◽  
Sputtering Power ◽  
Xrd Patterns ◽  
Deposited Films ◽  
Co Doped

Transparent conducting Ti-Al co-doped zinc oxide films (TAZO) with high transparency and relatively low resistivity have been successfully prepared by direct current magnetron sputtering. The effect of sputtering power on the structural, optical, and electrical properties of Ti-Al co-doped films were investigated. The XRD patterns show that the thin films were highly textured along the c-axis and perpendicular to the surface of the substrate. The electrical resistivity decreases when the sputtering power increases from 40W to 120W. When the sputtering power is 120w and the target-substrate distance is 60mm, it is obtained that the lowest resistivity is 3.23×10-4Ω·cm.The lowest stress is 0.864Gpa in all the deposited films. All the films present a high transmittance of above 91% in the visible range.

Transparent conducting V-co-doped AZO thin films prepared by magnetron sputtering

2003 ◽  
Vol 434 (1-2) ◽  
pp. 14-19 ◽  
Author(s):  
Shingo Suzuki ◽  
Toshihiro Miyata ◽  
Makoto Ishii ◽  
Tadatsugu Minami
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Transparent Conducting ◽  
Co Doped

Fabrication of F–Nb co-doped transparent conducting TiO2 films using the sol-gel method

2021 ◽  
Vol 126 ◽  
pp. 105675
Author(s):  
Yang Ren ◽  
Haiyan He ◽  
Yunwei Wang ◽  
Ying Gong ◽  
Gaoyang Zhao
Keyword(s):  
Sol Gel ◽  
Tio2 Films ◽  
Gel Method ◽  
Sol Gel Method ◽  
Transparent Conducting ◽  
Co Doped
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