P-type transport characteristics of copper-oxide thin films deposited by vacuum thermal evaporation

2011 ◽  
Vol 12 (5) ◽  
pp. 2267-2271 ◽  
Author(s):  
Ho-Nyeon Lee ◽  
Byeong-Jun Song
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Thermal Evaporation ◽  
Oxide Thin Films ◽  
Vacuum Thermal Evaporation ◽  
P Type

Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

2016 ◽  
Vol 42 (4) ◽  
pp. 5517-5522 ◽  
Author(s):  
Wanjoo Maeng ◽  
Seung-Hwan Lee ◽  
Jung-Dae Kwon ◽  
Jozeph Park ◽  
Jin-Seong Park
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Copper Oxide ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Oxide Thin Films ◽  
P Type

scholarly journals Thermal oxidation impact on the optoelectronic and hydrogen sensing properties of p-type copper oxide thin films

2021 ◽  
pp. 111646
Author(s):  
Damian Wojcieszak ◽  
Agata Obstarczyk ◽  
Ewa Mańkowska ◽  
Michał Mazur ◽  
Danuta Kaczmarek ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Thermal Oxidation ◽  
Oxide Thin Films ◽  
Sensing Properties ◽  
Hydrogen Sensing ◽  
P Type

scholarly journals Electrical and morphological study of thermally evaporated (Sb2S3)1-xSnx thin films

2019 ◽  
Vol 13 (26) ◽  
pp. 42-50
Author(s):  
Bushra A. Hasan
Keyword(s):  
Thin Films ◽  
Thermal Evaporation ◽  
Structural Morphology ◽  
Glass Substrates ◽  
Vacuum Thermal Evaporation ◽  
Microstructure Parameters ◽  
Order Of Magnitude ◽  
P Type ◽  
Tin Content ◽  
Deposition Conditions

(Sb2S3)1-xSnx thin films with different concentrations (0, 0.05 and0.15) and thicknesses (300,500 and 700nm) have been deposited bysingle source vacuum thermal evaporation onto glass substrates atambient temperature to study the effect of tin content, thickness andon its structural morphology, and electrical properties. AFM studyrevealed that microstructure parameters such as crystallite size, androughness found to depend upon deposition conditions. The DCconductivity of the vacuum evaporated (Sb2S3)1-x Snx thin films wasmeasured in the temperature range (293-473)K and was found toincrease on order of magnitude with increase of thickness, and tincontent. The plot of conductivity with reciprocal temperaturesuggests, there are three activation energies Ea1, Ea2 and Ea3 for(Sb2S3)1-x Snx for all x content values and thicknesses whichdecreases with increasing tin content and thickness. Hall effectmeasurement showed that low thickness (Sb2S3)1-x Snx film exhibitn-type conductance whereas the film exhibit p-type towards thehigher thickness. The electric carrier concentration and mobilityshow opposite dependence upon tin content and thickness.

Synthesis and evaluation of new copper ketoiminate precursors for a facile and additive-free solution-based approach to nanoscale copper oxide thin films

2017 ◽  
Vol 46 (8) ◽  
pp. 2670-2679 ◽  
Author(s):  
Sarah Karle ◽  
Detlef Rogalla ◽  
Arne Ludwig ◽  
Hans-Werner Becker ◽  
Andreas Dirk Wieck ◽  
...  
Keyword(s):  
Thin Films ◽  
Copper Oxide ◽  
Chemical Solution Deposition ◽  
Free Solution ◽  
Chemical Solution ◽  
Oxide Thin Films ◽  
High Quality ◽  
Solution Deposition ◽  
P Type

A streamlined approach towards high-quality p-type CuOx nanostructures was successfully established based on rational precursor design for chemical solution deposition.

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