Atomic layer deposited p-type copper oxide thin films and the associated thin film transistor properties

2016 ◽  
Vol 42 (4) ◽  
pp. 5517-5522 ◽  
Author(s):  
Wanjoo Maeng ◽  
Seung-Hwan Lee ◽  
Jung-Dae Kwon ◽  
Jozeph Park ◽  
Jin-Seong Park
RSC Advances ◽  
2018 ◽  
Vol 8 (60) ◽  
pp. 34215-34223
Author(s):  
So-Yeong Na ◽  
Sung-Min Yoon

Oxide thin films transistors (TFTs) with Hf and Al co-incorporated ZnO active channels prepared by atomic-layer deposition are presented.


AIP Advances ◽  
2016 ◽  
Vol 6 (1) ◽  
pp. 015112 ◽  
Author(s):  
Fan-Yong Ran ◽  
Zewen Xiao ◽  
Hidenori Hiramatsu ◽  
Keisuke Ide ◽  
Hideo Hosono ◽  
...  

RSC Advances ◽  
2015 ◽  
Vol 5 (29) ◽  
pp. 22712-22717 ◽  
Author(s):  
Soumyadeep Sinha ◽  
Devika Choudhury ◽  
Gopalan Rajaraman ◽  
Shaibal K. Sarkar

DFT study of the growth mechanism of atomic layer deposited Zn3N2 thin film applied as a channel layer of TFT.


2014 ◽  
Vol 40 (6) ◽  
pp. 7829-7836 ◽  
Author(s):  
Kyeong-Ah Kim ◽  
Jun-Yong Bak ◽  
Jeong-Seon Choi ◽  
Sung-Min Yoon

2013 ◽  
Vol 543 ◽  
pp. 3-6 ◽  
Author(s):  
C. Nunes de Carvalho ◽  
P. Parreira ◽  
G. Lavareda ◽  
P. Brogueira ◽  
A. Amaral

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