Carrier Transport Phenomena in Metal Contacts to AlInGaN-Based Laser Diodes

Continuing research interest in quantum-well inter-subband-based devices can be associated with its prospects for numerous optoelectronic applications in the long wavelength infrared region. This paper presents experimentally measured field dependence of the thermally activated effective-barrier lowering in quantum-well inter-subband photodetectors (QWIPs). This barrier lowering is considered to be the main cause of the commonly observed asymmetry in the current–voltage characteristics of QWIPs. The research results presented here are important for understanding the factors determining the dark-current mechanisms that are crucial for further improvement in the characteristics of these devices. The study of current-carrier transport phenomena in a quantum well is also of interest for developing quantum-well lasers and avalanche photodetectors based on intraband processes, and also transistors based on ballistic or hot carrier transport phenomena.

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The effects of carrier transport phenomena on the spectral and power characteristics of blue superluminescent light emitting diodes

Physica E Low-dimensional Systems and Nanostructures ◽

10.1016/j.physe.2015.01.035 ◽

2015 ◽

Vol 69 ◽

pp. 165-170 ◽

Cited By ~ 2

Author(s):

N. Moslehi Milani ◽

A. Asgari

Keyword(s):

Carrier Transport ◽

Light Emitting Diodes ◽

Transport Phenomena ◽

Light Emitting ◽

Power Characteristics

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Simulation of Carrier Transport and Hot Phonon Effects in Quantum Well Laser Diodes

Simulation of Semiconductor Processes and Devices 1998 ◽

10.1007/978-3-7091-6827-1_69 ◽

1998 ◽

pp. 275-275

Author(s):

K. Hess

Keyword(s):

Quantum Well ◽

Carrier Transport ◽

Laser Diodes ◽

Quantum Well Laser

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Metal - Gan Contact Technology

MRS Proceedings ◽

10.1557/proc-514-449 ◽

1998 ◽

Vol 514 ◽

Cited By ~ 1

Author(s):

S. S. Lau

Keyword(s):

Barrier Height ◽

Carrier Transport ◽

Ohmic Contacts ◽

Accurate Determination ◽

Surface Cleaning ◽

Metal Contacts ◽

Metal Thin Films ◽

Ohmic Behavior ◽

Metal Silicides

ABSTRACTIn this talk, we summarize the experimental results obtained on metal-GaN interactions in our laboratory. These interactions include the epitaxial growth of metal thin films on chemically cleaned GaN surfaces, metal silicides for Schottky contacts and metallization schemes for ohmic contacts. We found that many fcc and hcp metals can grow epitaxially on (0001) GaN surfaces at room temperature without in-situ surface cleaning. Metal silicide contacts (such as PtSi) may be more suitable for high temperature applications than elemental contacts, due to the thermal stability of silicides. The intrinsic mechanisms for ohmic behavior for various metal contacts are not well understood at present. More consistent barrier height values measured experimentally can shed light on this issue. Due to the defective nature of the GaN layers, carrier transport across the metal/GaN interface can be due to a number of transport mechanisms, thus making accurate determination of the barrier height difficult. In spite of these difficulties, it seems possible to draw certain general conclusions on the electrical behavior of metal contacts on n-GaN.

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Metal/Semiconductor Contacts to Silicon Carbide: Physics and Technology

Materials Science Forum ◽

10.4028/www.scientific.net/msf.924.339 ◽

2018 ◽

Vol 924 ◽

pp. 339-344 ◽

Cited By ~ 4

Author(s):

Fabrizio Roccaforte ◽

Marilena Vivona ◽

Giuseppe Greco ◽

Raffaella Lo Nigro ◽

Filippo Giannazzo ◽

...

Keyword(s):

Silicon Carbide ◽

Carrier Transport ◽

Transport Mechanisms ◽

Metal Contacts ◽

Semiconductor Interfaces ◽

Key Points ◽

Schottky Type ◽

Semiconductor Contacts ◽

P Type

The physics and technology of metal/semiconductor interfaces are key-points in the development of silicon carbide (SiC) based devices. Although in the last decade, the metal to 4H-SiC contacts, either Ohmic or Schottky type, have been extensively investigated with important achievements, these remain even now an intriguing topic since metal contacts are fundamental bricks of all electronic devices. Hence, their comprehension is at the base of the improvement of the performances of simple devices and complex systems. In this context, this paper aims to highlight some relevant aspects related to metal/semiconductor contacts to SiC, both on n-type and p-type, with an emphasis on the role of the barrier and on the carrier transport mechanisms at the interfaces.

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