Metal - Gan Contact Technology

1998 ◽  
Vol 514 ◽  
Author(s):  
S. S. Lau
Keyword(s):  
Barrier Height ◽  
Carrier Transport ◽  
Ohmic Contacts ◽  
Accurate Determination ◽  
Surface Cleaning ◽  
Metal Contacts ◽  
Metal Thin Films ◽  
Ohmic Behavior ◽  
Metal Silicides

ABSTRACTIn this talk, we summarize the experimental results obtained on metal-GaN interactions in our laboratory. These interactions include the epitaxial growth of metal thin films on chemically cleaned GaN surfaces, metal silicides for Schottky contacts and metallization schemes for ohmic contacts. We found that many fcc and hcp metals can grow epitaxially on (0001) GaN surfaces at room temperature without in-situ surface cleaning. Metal silicide contacts (such as PtSi) may be more suitable for high temperature applications than elemental contacts, due to the thermal stability of silicides. The intrinsic mechanisms for ohmic behavior for various metal contacts are not well understood at present. More consistent barrier height values measured experimentally can shed light on this issue. Due to the defective nature of the GaN layers, carrier transport across the metal/GaN interface can be due to a number of transport mechanisms, thus making accurate determination of the barrier height difficult. In spite of these difficulties, it seems possible to draw certain general conclusions on the electrical behavior of metal contacts on n-GaN.

Accurate Determination of Barrier Height and Kinetics for the F + H2O → HF + OH Reaction

2013 ◽  
Vol 117 (36) ◽  
pp. 8864-8872 ◽  
Author(s):  
Thanh Lam Nguyen ◽  
Jun Li ◽  
Richard Dawes ◽  
John F. Stanton ◽  
Hua Guo
Keyword(s):  
Barrier Height ◽  
Accurate Determination

Current Transport Mechanisms in Au-Free Metallizations for CMOS Compatible GaN HEMT Technology

2020 ◽  
Vol 1004 ◽  
pp. 725-730
Author(s):  
Fabrizio Roccaforte ◽  
Monia Spera ◽  
Salvatore Di Franco ◽  
Raffaella Lo Nigro ◽  
Patrick Fiorenza ◽  
...  
Keyword(s):  
Barrier Height ◽  
Ohmic Contacts ◽  
Specific Contact Resistance ◽  
Current Transport ◽  
Large Area ◽  
Si Substrates ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission

Gallium nitride (GaN) and its AlGaN/GaN heterostructures grown on large area Si substrates are promising systems to fabricate power devices inside the existing Si CMOS lines. For this purpose, however, Au-free metallizations are required to avoid cross contaminations. In this paper, the mechanisms of current transport in Au-free metallization on AlGaN/GaN heterostructures are studied, with a focus on non-recessed Ti/Al/Ti Ohmic contacts. In particular, an Ohmic behavior of Ti/Al/Ti stacks was observed after an annealing at moderate temperature (600°C). The values of the specific contact resistance ρc decreased from 1.6×104 Ω.cm2 to 7×105 Ω.cm2 with increasing the annealing time from 60 to 180s. The temperature dependence of ρc indicated that the current flow is ruled by a thermionic field emission (TFE) mechanism, with barrier height values of 0.58 eV and 0.52 eV, respectively. Finally, preliminary results on the forward and reverse bias characterization of Au-free tungsten carbide (WC) Schottky contacts are presented. This contact exhibited a barrier height value of 0.82 eV.

Metal Contacts to n- AlXGa1-xN

1997 ◽  
Vol 482 ◽  
Author(s):  
A. Sampath ◽  
H. M. Ng ◽  
D. Korakakis ◽  
T. D. Moustakas
Keyword(s):  
Barrier Height ◽  
Conduction Band ◽  
Ohmic Contacts ◽  
Schottky Barriers ◽  
Metal Contacts ◽  
Vacuum Level ◽  
Al Content ◽  
Sequential Deposition ◽  
Contact Resistivities

AbstractIn this paper we report on the formation of ohmic contacts to n- AlxGa1-xN alloys. The films were produced by plasma-assisted MBE and doped n- type with silicon at doping levels between 1018 to 1019 cm-3. Contacts were formed by sequential deposition of 200 Å of Ti and 2000 Å of Al and the contact resistivities were determined from TLM measurements. For low Al- content (x<. 10) the I-V characteristics are linear with contact resistivities of between 10-4 to 10-5 cm2. The contacts become progressively non-ohmic at Al concentrations greater than 10%. There results are consistent with the Schottky limit being applicable to these alloys and thus the Ti/Al contact forms Schottky barriers with higher barrier height as the conduction band of the alloy moves towards the vacuum level.

A Two-Step Process for the Formation of Au-Ge Ohmic Contacts to n-GaAs

1990 ◽  
Vol 181 ◽  
Author(s):  
M. A. Dornath-Mohr ◽  
M. W. Cole ◽  
H. S. Lee ◽  
C. S. Wrenn ◽  
D. W. Eckart ◽  
...  
Keyword(s):  
Low Temperature ◽  
Barrier Height ◽  
Gaas Substrate ◽  
Ohmic Contacts ◽  
Atomic Percent ◽  
Second Step ◽  
Semiconductor Interface ◽  
Step Process ◽  
Ohmic Behavior

ABSTRACTThe formation of low temperature Au-Ge contacts to n-GaAs is a two-step process. In the first step, the metals segregate into Au and Ge rich regions and the intermixing of the Au and Ge with the Ga and As causes a reduction in the barrier height. The second step occurs after extended annealing, during which time Au and Ge continue to diffuse into the substrate. An orthorhombic Au-Ga phase is formed and it is likely that other Au-Ga or Ge-As phases are formed. The length of the extended anneal is dependent upon the atomic percent of Ge in the film, with the 10 at. % Ge taking 6 hr., the 27 at. % Ge taking 3 hr. and the 50 at. % Ge taking 9 hr. to become ohmic. The 75 at. % Ge sample doesn’t show ohmic behavior even after 33 hr. of annealing. The metal-semiconductor interface configuration appears abrupt, showing no protrusions into the GaAs substrate.

scholarly journals X-ray photoemission determination of the Schottky barrier height of metal contacts ton–GaN andp–GaN

2002 ◽  
Vol 92 (11) ◽  
pp. 6671-6678 ◽  
Author(s):  
K. A. Rickert ◽  
A. B. Ellis ◽  
Jong Kyu Kim ◽  
Jong-Lam Lee ◽  
F. J. Himpsel ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Schottky Barrier Height ◽  
Metal Contacts ◽  
X Ray

scholarly journals Metal/Semiconductor Barrier Properties of Non-Recessed Ti/Al/Ti and Ta/Al/Ta Ohmic Contacts on AlGaN/GaN Heterostructures

Energies ◽  
2019 ◽  
Vol 12 (14) ◽  
pp. 2655 ◽  
Author(s):  
Spera ◽  
Greco ◽  
Nigro ◽  
Scalese ◽  
Bongiorno ◽  
...  
Keyword(s):  
Contact Resistance ◽  
Barrier Height ◽  
Ohmic Contacts ◽  
Barrier Properties ◽  
Specific Contact Resistance ◽  
Conductive Atomic Force Microscopy ◽  
Force Microscopy ◽  
Ohmic Behavior ◽  
Specific Contact ◽  
Thermionic Field Emission

This paper compares the metal/semiconductor barrier height properties of non-recessed Ti/Al/Ti and Ta/Al/Ta contacts on AlGaN/GaN heterostructures. Both contacts exhibited a rectifying behavior after deposition and after annealing at temperatures up to 550 °C. The ohmic behavior was reached after annealing at 600 °C. High-resolution morphological and electrical mapping by conductive atomic force microscopy showed a flat surface for both contacts, with the presence of isolated hillocks, which had no significant impact on the contact resistance. Structural analyses indicated the formation of the Al3Ti and Al3Ta phases upon annealing. Furthermore, a thin interfacial TiN layer was observed in the Ti/Al/Ti samples, which is likely responsible for a lower barrier and a better specific contact resistance (c = 1.6 10−4 Ωcm2) with respect to the Ta/Al/Ta samples (c = 4.0 10−4 Ωcm2). The temperature dependence of the specific contact resistance was described by a thermionic field emission mechanism, determining barrier height values in the range of 0.58–0.63 eV. These results were discussed in terms of the different microstructures of the interfaces in the two systems.

A quantitative approach to inner shell losses

1978 ◽  
Vol 36 (1) ◽  
pp. 526-527 ◽  
Author(s):  
R.D. Leapman ◽  
P. Rez ◽  
D.F. Mayers
Keyword(s):  
Energy Transfer ◽  
Cross Section ◽  
Cross Sections ◽  
Accurate Determination ◽  
Background Intensity ◽  
Core Excitation ◽  
Quantitative Basis ◽  
Cross Section Differential ◽  
Bound Electrons

Microanalysis by EELS has been developing rapidly and though the general form of the spectrum is now understood there is a need to put the technique on a more quantitative basis (1,2). Certain aspects important for microanalysis include: (i) accurate determination of the partial cross sections, σx(α,ΔE) for core excitation when scattering lies inside collection angle a and energy range ΔE above the edge, (ii) behavior of the background intensity due to excitation of less strongly bound electrons, necessary for extrapolation beneath the signal of interest, (iii) departures from the simple hydrogenic K-edge seen in L and M losses, effecting σx and complicating microanalysis. Such problems might be approached empirically but here we describe how computation can elucidate the spectrum shape.The inelastic cross section differential with respect to energy transfer E and momentum transfer q for electrons of energy E0 and velocity v can be written as

Microstructure of sputter deposited Ni-Sb ohmic contacts on GaAs

1989 ◽  
Vol 47 ◽  
pp. 450-451
Author(s):  
S. Yegnasubramanian ◽  
V.C. Kannan ◽  
R. Dutto ◽  
P.J. Sakach
Keyword(s):  
High Performance ◽  
Ohmic Contacts ◽  
Surface Defects ◽  
Pure Metal ◽  
Device Fabrication ◽  
Native Oxide ◽  
Metal Thin Films ◽  
Recent Developments ◽  
Different Temperatures ◽  
Sputter Deposited

Recent developments in the fabrication of high performance GaAs devices impose crucial requirements of low resistance ohmic contacts with excellent contact properties such as, thermal stability, contact resistivity, contact depth, Schottky barrier height etc. The nature of the interface plays an important role in the stability of the contacts due to problems associated with interdiffusion and compound formation at the interface during device fabrication. Contacts of pure metal thin films on GaAs are not desirable due to the presence of the native oxide and surface defects at the interface. Nickel has been used as a contact metal on GaAs and has been found to be reactive at low temperatures. Formation Of Ni2 GaAs at 200 - 350C is reported and is found to grow epitaxially on (001) and on (111) GaAs, but is shown to be unstable at 450C. This paper reports the investigations carried out to understand the microstructure, nature of the interface and composition of sputter deposited and annealed (at different temperatures) Ni-Sb ohmic contacts on GaAs by TEM. Attempts were made to correlate the electrical properties of the films such as the sheet resistance and contact resistance, with the microstructure. The observations are corroborated by Scanning Auger Microprobe (SAM) investigations.

Fast calibration of CBED patterns for quantitative analysis

1993 ◽  
Vol 51 ◽  
pp. 674-675
Author(s):  
M.A. Gribelyuk ◽  
M. Rühle
Keyword(s):  
Reciprocal Lattice ◽  
Accurate Determination ◽  
Incident Beam ◽  
Crystal Thickness ◽  
Structure Model ◽  
Beam Direction ◽  
Transmitted Beam ◽  
Reciprocal Vector ◽  
On Line

A new method is suggested for the accurate determination of the incident beam direction K, crystal thickness t and the coordinates of the basic reciprocal lattice vectors V1 and V2 (Fig. 1) of the ZOLZ plans in pixels of the digitized 2-D CBED pattern. For a given structure model and some estimated values Vest and Kest of some point O in the CBED pattern a set of line scans AkBk is chosen so that all the scans are located within CBED disks.The points on line scans AkBk are conjugate to those on A0B0 since they are shifted by the reciprocal vector gk with respect to each other. As many conjugate scans are considered as CBED disks fall into the energy filtered region of the experimental pattern. Electron intensities of the transmitted beam I0 and diffracted beams Igk for all points on conjugate scans are found as a function of crystal thickness t on the basis of the full dynamical calculation.

Computer-Assisted High-Re Solution TEM

1990 ◽  
Vol 48 (1) ◽  
pp. 162-163
Author(s):  
F.A. Ponce ◽  
H. Hikashi
Keyword(s):  
Signal To Noise Ratio ◽  
Accurate Determination ◽  
Computer Software ◽  
Video Camera ◽  
Image Contrast ◽  
Objective Lens ◽  
Computer Assisted ◽  
Optical Parameters ◽  
Astigmatism Correction

The determination of the atomic positions from HRTEM micrographs is only possible if the optical parameters are known to a certain accuracy, and reliable through-focus series are available to match the experimental images with calculated images of possible atomic models. The main limitation in interpreting images at the atomic level is the knowledge of the optical parameters such as beam alignment, astigmatism correction and defocus value. Under ordinary conditions, the uncertainty in these values is sufficiently large to prevent the accurate determination of the atomic positions. Therefore, in order to achieve the resolution power of the microscope (under 0.2nm) it is necessary to take extraordinary measures. The use of on line computers has been proposed [e.g.: 2-5] and used with certain amount of success.We have built a system that can perform operations in the range of one frame stored and analyzed per second. A schematic diagram of the system is shown in figure 1. A JEOL 4000EX microscope equipped with an external computer interface is directly linked to a SUN-3 computer. All electrical parameters in the microscope can be changed via this interface by the use of a set of commands. The image is received from a video camera. A commercial image processor improves the signal-to-noise ratio by recursively averaging with a time constant, usually set at 0.25 sec. The computer software is based on a multi-window system and is entirely mouse-driven. All operations can be performed by clicking the mouse on the appropiate windows and buttons. This capability leads to extreme friendliness, ease of operation, and high operator speeds. Image analysis can be done in various ways. Here, we have measured the image contrast and used it to optimize certain parameters. The system is designed to have instant access to: (a) x- and y- alignment coils, (b) x- and y- astigmatism correction coils, and (c) objective lens current. The algorithm is shown in figure 2. Figure 3 shows an example taken from a thin CdTe crystal. The image contrast is displayed for changing objective lens current (defocus value). The display is calibrated in angstroms. Images are stored on the disk and are accessible by clicking the data points in the graph. Some of the frame-store images are displayed in Fig. 4.

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