scholarly journals Techniques for Calculating Two Interesting Types of Dielectric Materials in Straight Rectangular Waveguides and Their Applications

2020 ◽  
Author(s):  
Zion Menachem
Keyword(s):  
Dielectric Materials ◽  
Rectangular Waveguides

Open-ended rectangular waveguides as antennas for measuring high loss dielectric materials at MM band

2003 ◽  
Author(s):  
Niu Maode ◽  
Shen Ying ◽  
Xu Deming
Keyword(s):  
Dielectric Materials ◽  
High Loss ◽  
Rectangular Waveguides

Dielectric Materials, Measurements and Applications

1989 ◽  
Vol 3 (2) ◽  
pp. 92
Author(s):  
B.K.P. Scaife
Keyword(s):  
Dielectric Materials

Evaluation of the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings by the multi-frequency radio wave method of a slow surface electromagnetic waves

2020 ◽  
pp. 51-58
Author(s):  
Aleksandr I. Kazmin ◽  
Pavel A. Fedjunin
Keyword(s):  
Radio Wave ◽  
Noise Level ◽  
Electromagnetic Waves ◽  
Dielectric Materials ◽  
Geometric Parameters ◽  
Experimental Investigations ◽  
Wave Method ◽  
Dielectric Coatings ◽  
Surface Electromagnetic Waves ◽  
Multilayer Dielectric

One of the most important diagnostic problems multilayer dielectric materials and coatings is the development of methods for quantitative interpretation of the checkout results their electrophysical and geometric parameters. The results of a study of the potential informativeness of the multi-frequency radio wave method of surface electromagnetic waves during reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings are presented. The simulation model is presented that makes it possible to evaluate of the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric coatings. The model takes into account the values of the electrophysical and geometric parameters of the coating, the noise level in the measurement data and the measurement bandwidth. The results of simulation and experimental investigations of reconstruction of the structure of relative permittivitties and thicknesses of single-layer and double-layer dielectric coatings with different thicknesses, with different values of the standard deviation (RMS) of the noise level in the measured attenuation coefficients of the surface slow electromagnetic wave are presented. Coatings based on the following materials were investigated: polymethyl methacrylate, F-4D PTFE, RO3010. The accuracy of reconstruction of the electrophysical parameters of the layers decreases with an increase in the number of evaluated parameters and an increase in the noise level. The accuracy of the estimates of the electrophysical parameters of the layers also decreases with a decrease in their relative permittivity and thickness. The results of experimental studies confirm the adequacy of the developed simulation model. The presented model allows for a specific measuring complex that implements the multi-frequency radio wave method of surface electromagnetic waves, to quantify the potential possibilities for the accuracy of reconstruction of the electrophysical and geometric parameters of multilayer dielectric materials and coatings. Experimental investigations and simulation results of a multilayer dielectric coating demonstrated the theoretical capabilities gained relative error permittivity and thickness of the individual layers with relative error not greater than 10 %, with a measurement bandwidth of 1 GHz and RMS of noise level 0,003–0,004.

Modification of Low ĸ Materials for ULSI Multilevel Interconnects by Ion Implantation

2002 ◽  
Vol 716 ◽  
Author(s):  
Alok Nandini ◽  
U. Roy ◽  
A. Mallikarjunan ◽  
A. Kumar ◽  
J. Fortin ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Ion Implantation ◽  
Dielectric Materials ◽  
Dramatic Improvement ◽  
Force Microscopy ◽  
Low Dielectric ◽  
Quantitative Measurements ◽  
Hardness Increase ◽  
Xerogel Films ◽  
Ion Species

AbstractThin films of low dielectric constant (κ) materials such as Xerogel (ĸ=1.76) and SilkTM (ĸ=2.65) were implanted with argon, neon, nitrogen, carbon and helium with 2 x 1015 cm -2 and 1 x 1016 cm -2 dose at energies varying from 50 to 150 keV at room temperature. In this work we discuss the improvement of hardness as well as elasticity of low ĸ dielectric materials by ion implantation. Ultrasonic Force Microscopy (UFM) [6] and Nano indentation technique [5] have been used for qualitative and quantitative measurements respectively. The hardness increased with increasing ion energy and dose of implantation. For a given energy and dose, the hardness improvement varied with ion species. Dramatic improvement of hardness is seen for multi-dose implantation. Among all the implanted ion species (Helium, Carbon, Nitrogen, Neon and Argon), Argon implantation resulted in 5x hardness increase in Xerogel films, sacrificing only a slight increase (∼ 15%) in dielectric constant.

Materials Issues and Characterization of Low-k Dielectric Materials

MRS Bulletin ◽  
1997 ◽  
Vol 22 (10) ◽  
pp. 49-54 ◽  
Author(s):  
E. Todd Ryan ◽  
Andrew J. McKerrow ◽  
Jihperng Leu ◽  
Paul S. Ho
Keyword(s):  
Process Integration ◽  
Dielectric Materials ◽  
Propagation Delay ◽  
Thermomechanical Properties ◽  
General Criterion ◽  
Crosstalk Noise ◽  
Total Delay ◽  
Interlayer Dielectrics ◽  
Performance Improvements ◽  
And Performance

Continuing improvement in device density and performance has significantly affected the dimensions and complexity of the wiring structure for on-chip interconnects. These enhancements have led to a reduction in the wiring pitch and an increase in the number of wiring levels to fulfill demands for density and performance improvements. As device dimensions shrink to less than 0.25 μm, the propagation delay, crosstalk noise, and power dissipation due to resistance-capacitance (RC) coupling become significant. Accordingly the interconnect delay now constitutes a major fraction of the total delay limiting the overall chip performance. Equally important is the processing complexity due to an increase in the number of wiring levels. This inevitably drives cost up by lowering the manufacturing yield due to an increase in defects and processing complexity.To address these problems, new materials for use as metal lines and interlayer dielectrics (ILDs) and alternative architectures have surfaced to replace the current Al(Cu)/SiO2 interconnect technology. These alternative architectures will require the introduction of low-dielectric-constant k materials as the interlayer dielectrics and/or low-resistivity conductors such as copper. The electrical and thermomechanical properties of SiO2 are ideal for ILD applications, and a change to material with different properties has important process-integration implications. To facilitate the choice of an alternative ILD, it is necessary to establish general criterion for evaluating thin-film properties of candidate low-k materials, which can be later correlated with process-integration problems.

Permittivity Measurement Technique for Inhomogeneous Dielectric Materials

2006 ◽  
Vol 65 (15) ◽  
pp. 1439-1451
Author(s):  
V. E. Budanov ◽  
N. L. Yevich ◽  
N. N. Suslov
Keyword(s):  
Measurement Technique ◽  
Dielectric Materials ◽  
Permittivity Measurement ◽  
Inhomogeneous Dielectric
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