Electronic Band Structure of Aluminium Nitride and Gallium Nitride Crystallizing in the Wurtzite and Zinc Blende Structures

2019 ◽  
Vol 38d (2) ◽  
pp. 81
Author(s):  
Amita Sharma
Keyword(s):  
Gallium Nitride ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Aluminium Nitride ◽  
Electronic Band ◽  
Zinc Blende

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

Electronic band structure of zinc blende

1998 ◽  
Vol 58 (11) ◽  
pp. 7053-7058 ◽  
Author(s):  
S. R. Barman ◽  
S.-A. Ding ◽  
G. Neuhold ◽  
K. Horn ◽  
D. Wolfframm ◽  
...  
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Zinc Blende

ELECTRONIC AND ELASTIC PROPERTIES OF ZINC-BLENDE MgSe

2013 ◽  
Vol 27 (09) ◽  
pp. 1350027 ◽  
Author(s):  
B. I. ADETUNJI ◽  
P. O. ADEBAMBO ◽  
J. O. AKINLAMI ◽  
G. A. ADEBAYO
Keyword(s):  
Band Structure ◽  
Elastic Properties ◽  
Cohesive Energy ◽  
Density Functional ◽  
Phonon Dispersion ◽  
Electronic Band Structure ◽  
Density Of State ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Zinc Blende

In the present study, ground state and elastic properties of semiconductor MgSe in zinc-blende phase are investigated using density functional theory (DFT). Exchange-correlation potentials are approximated with the generalized gradient approximation (GGA). From the calculated bulk modulus, we determine the refractive index, plasmon energy, cohesive energy and micro-hardness of the MgSe semiconductor binary alloy. The density of state (DOS), projected density of state (PDOS), phonon dispersion frequencies, charged density, electronic band structure and dielectric functions are also reported. From the band structure, a direct band gap of 2.50 eV was observed in close agreement with other reported calculations, but lower than the experimental value of 3.60 eV. Along the high symmetries directions, we found a striking resemblance between MgSe and a III–V semiconductor, while the high cohesive energy in MgSe suggests filled bonding orbitals which might result in decrease in atomic volume with corresponding increased compression of the s-orbitals under any transition series.

ELECTRONIC STRUCTURE, DIELECTRIC AND DYNAMICAL PROPERTIES OF ZINC-BLENDE AlN FROM FIRST PRINCIPLES CALCULATION

2007 ◽  
Vol 21 (26) ◽  
pp. 1775-1784
Author(s):  
HUAN-YOU WANG ◽  
HUI XU ◽  
JIAN-RONG XIAO ◽  
MINGJUN LI
Keyword(s):  
Band Structure ◽  
Density Functional ◽  
Electronic Band Structure ◽  
Local Density ◽  
Lattice Parameter ◽  
First Principles Calculation ◽  
Generalized Gradient ◽  
Electronic Band ◽  
Plane Wave Method ◽  
Zinc Blende

We have performed density-functional perturbation calculation for zinc-blende AlN using the pseudopotential plane-wave method. The results obtained using both the local-density approximate (LDA) and the generalized-gradient approximate (GGA) for exchange-correlation functional are compared. The ground state properties and response function properties for zinc-blende AlN , including the electronic band structure, charge density, Born effective charge, dielectric constant and vibrational properties are reported. Our results are basically in agreement with experimental data and theoretical values available, but the bandgap is underestimated and the first optical mode in the phonon band structure is overestimated. This can be attributed to the underestimation of the lattice parameter and selection of the pseudopotential.

The electronic band structure of silicon

Physica ◽  
1954 ◽  
Vol 3 (7-12) ◽  
pp. 967-970
Author(s):  
D JENKINS
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

THE ELECTRONIC BAND STRUCTURE OF V3Ga AND V3Si

1972 ◽  
Vol 33 (C3) ◽  
pp. C3-223-C3-233 ◽  
Author(s):  
I. B. GOLDBERG ◽  
M. WEGER
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band
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