scholarly journals Correlation between a Structural Change and a Thermoelectric Performance of a Glassy Carbon Thin Film Induced by Electron Beam Irradiation

2016 ◽  
Vol 29 (4) ◽  
pp. 156-160
Author(s):  
Inseon Oh ◽  
Junhyeon Jo ◽  
Ki-Seok An ◽  
Jung-woo Yoo
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Structural Change ◽  
Glassy Carbon ◽  
Electron Beam Irradiation ◽  
Thermoelectric Performance ◽  
Beam Irradiation ◽  
Carbon Thin Film

Local crystallization and enhanced thermoelectric performance of glassy carbon induced by the electron beam irradiation

2016 ◽  
Vol 16 (11) ◽  
pp. 1511-1516 ◽  
Author(s):  
Inseon Oh ◽  
Junhyeon Jo ◽  
Jungmin Park ◽  
Jongmin Lee ◽  
Heungjoo Shin ◽  
...  
Keyword(s):  
Electron Beam ◽  
Glassy Carbon ◽  
Electron Beam Irradiation ◽  
Thermoelectric Performance ◽  
Beam Irradiation

Effects of Electron Beam Irradiation on PZT/PLZT Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
Bo Jiang ◽  
Jiyoung Kim ◽  
Rajesh Khamankar ◽  
Insup Lee ◽  
Jack C. Lee
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Hysteresis Loops ◽  
Damage Mechanism ◽  
Charge Carriers ◽  
Beam Irradiation ◽  
Thin Film Capacitors ◽  
Domain Boundaries ◽  
Original Domain

ABSTRACTThe effects of electron beam irradiation on the electrical characteristics of Pt-PZT-Pt and Pt-PLZT-Pt (with La concentration of 5% and 10%) thin film capacitors were studied. The top electrode of each capacitor was bombarded by localized energetic electrons with incident energies varying from 5 keV to 25 ke.V. Large distortions in the hysteresis loops were observed when the incident electrons had enough energy to penetrate the 1000Å Pt top electrode. The damage effects are strongly dependent on the original domain orientation when the film is irradiated, and an applied a.c. field after the irradiation seems to induce some recovery effects. The damage mechanism is explained by a simple model which considers the effect of space charge fields generated by the charge carriers trapped at the domain boundaries.

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