Improvement in IGZO-based thin film transistor performance using a dual-channel structure and electron-beam-irradiation

2019 ◽  
Vol 34 (2) ◽  
pp. 025015 ◽  
Author(s):  
Young Joon Yoon ◽  
Bong Ho Kim ◽  
Hyun Ho Gu
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Thin Film Transistor ◽  
Channel Structure ◽  
Beam Irradiation ◽  
Dual Channel

scholarly journals Influence of Electron Beam Irradiation on the Electrical Properties of Zn-Sn-O Thin Film Transistor

2017 ◽  
Vol 27 (4) ◽  
pp. 216-220 ◽  
Author(s):  
In-Hwan Cho ◽  
◽  
Kyoung-Il Jo ◽  
Jun Hyuk Choi ◽  
Hai-Woong Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electrical Properties ◽  
Electron Beam Irradiation ◽  
Thin Film Transistor ◽  
Beam Irradiation

Effects of Electron Beam Irradiation on PZT/PLZT Thin Film Capacitors

1994 ◽  
Vol 361 ◽  
Author(s):  
Bo Jiang ◽  
Jiyoung Kim ◽  
Rajesh Khamankar ◽  
Insup Lee ◽  
Jack C. Lee
Keyword(s):  
Thin Film ◽  
Electron Beam ◽  
Electron Beam Irradiation ◽  
Hysteresis Loops ◽  
Damage Mechanism ◽  
Charge Carriers ◽  
Beam Irradiation ◽  
Thin Film Capacitors ◽  
Domain Boundaries ◽  
Original Domain

ABSTRACTThe effects of electron beam irradiation on the electrical characteristics of Pt-PZT-Pt and Pt-PLZT-Pt (with La concentration of 5% and 10%) thin film capacitors were studied. The top electrode of each capacitor was bombarded by localized energetic electrons with incident energies varying from 5 keV to 25 ke.V. Large distortions in the hysteresis loops were observed when the incident electrons had enough energy to penetrate the 1000Å Pt top electrode. The damage effects are strongly dependent on the original domain orientation when the film is irradiated, and an applied a.c. field after the irradiation seems to induce some recovery effects. The damage mechanism is explained by a simple model which considers the effect of space charge fields generated by the charge carriers trapped at the domain boundaries.

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