scholarly journals The effect of oxygen pressure on the dielectric properties of pulsed laser deposited La-doped PbTiO3 thin film*

2004 ◽  
Vol 53 (12) ◽  
pp. 4405
Author(s):  
Hu Da-Zhi ◽  
Shen Ming- Rong
Keyword(s):  
Thin Film ◽  
Dielectric Properties ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Pbtio3 Thin Film ◽  
Effect Of Oxygen ◽  
La Doped

Effect of oxygen pressure on the p-type conductivity of Ga, P co-doped ZnO thin film grown by pulsed laser deposition

2016 ◽  
Vol 42 (3) ◽  
pp. 4136-4142 ◽  
Author(s):  
Woo-Seok Noh ◽  
Jung-A Lee ◽  
Joon-Hyung Lee ◽  
Young-Woo Heo ◽  
Jeong-Joo Kim
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Zno Thin Film ◽  
Doped Zno ◽  
Effect Of Oxygen ◽  
P Type ◽  
Co Doped

The effect of oxygen pressure on the structure, morphology and photoluminescence intensity of pulsed laser deposited Gd2O2S:Tb3+ thin film phosphor

2010 ◽  
Vol 101 (4) ◽  
pp. 655-659 ◽  
Author(s):  
J. J. Dolo ◽  
O. M. Ntwaeaborwa ◽  
J. J. Terblans ◽  
E. Coetsee ◽  
B. F. Dejene ◽  
...  
Keyword(s):  
Thin Film ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Photoluminescence Intensity ◽  
Structure Morphology ◽  
Effect Of Oxygen

La-doped effect on the ferroelectric properties of Bi4Ti3O12–SrBi4Ti4O15 thin film fabricated by pulsed laser deposition

2002 ◽  
Vol 92 (9) ◽  
pp. 5420-5424 ◽  
Author(s):  
J. S. Zhu ◽  
D. Su ◽  
X. M. Lu ◽  
H. X. Qin ◽  
Y. N. Wang ◽  
...  
Keyword(s):  
Thin Film ◽  
Pulsed Laser Deposition ◽  
Ferroelectric Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
La Doped

The Dielectric Properties of Pb0.65Ba0.35ZrO3 Thin Films

2006 ◽  
Vol 306-308 ◽  
pp. 1313-1318
Author(s):  
J.S. Kim ◽  
B.H. Park ◽  
T.J. Choi ◽  
Se Hyun Shin ◽  
Jae Chul Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Dielectric Properties ◽  
Dielectric Loss ◽  
Deposition Temperature ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Axis Orientation ◽  
Capacitance Voltage ◽  
Bst Thin Film

Pb0.65Ba0.35ZrO3 (PBZ) thin films have been grown on MgO (001) substrates by pulsed-laser deposition (PLD). We have compared the structural and dielectric properties of PBZ films grown at various temperatures. A highly c-axis orientation has appeared at PBZ film grown at the deposition temperature of 550oC. The c-axis oriented PBZ film has also shown the largest tunability among all the PBZ films in capacitance-voltage measurements. The tunability and dielectric loss of the PBZ film was 20% and 0.00959, respectively. In addition, we have compared the temperature coefficient of capacitance (TCC) of a PBZ film with that of a Ba0.5Sr0.5TiO3 (BST) film which is a well-known material applicable to tunable microwave devices. We have confirmed that TCC value of a PBZ thin film was three-times smaller than that of a BST thin film.

Effect of oxygen pressure performance of PZO thin films deposited by pulsed laser deposition at low temperature

2017 ◽  
Vol 727 ◽  
pp. 1273-1279 ◽  
Author(s):  
Shihui Yu ◽  
Binhui Zhu ◽  
Haoran Zheng ◽  
Lingxia Li ◽  
Siliang Chen ◽  
...  
Keyword(s):  
Thin Films ◽  
Low Temperature ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Effect Of Oxygen
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