scholarly journals Properties of impurity band in one-dimensional photonic crystal coupled-resonator containing defect layers with negative refractive index

2006 ◽  
Vol 55 (6) ◽  
pp. 2777
Author(s):  
Dong Hai-Xia ◽  
Jiang Hai-Tao ◽  
Yang Cheng-Quan ◽  
Shi Yun-Long
2011 ◽  
Vol 38 (10) ◽  
pp. 1006002
Author(s):  
董海霞 Dong Haixia ◽  
董丽娟 Dong Lijuan ◽  
杨成全 Yang Chengquan ◽  
石云龙 Shi Yunlong

2010 ◽  
Vol 39 (s1) ◽  
pp. 48-53
Author(s):  
褚博文 CHU Bo-wen ◽  
赵丽明 ZHAO Li-ming ◽  
赵静 ZHAO Jing

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Yanni Zhang ◽  
Jiaxi Yang ◽  
Meiqi Song ◽  
Xuan Zhang ◽  
Daquan Yang

We propose a design of series-connected one-dimensional photonic crystal nanofiber cavity sensor (1-D PC-NCS) and one-dimensional photonic crystal nanofiber bandgap filter (1-D PC-NBF). The proposed structure can get a single air mode for refractive index sensing with its extinction ratio of 58.64 dB. It filters out the high order mode and reduces the interaction between signals. By 3D FDTD, the calculated sensitivity is 848.18 nm/RIU (RIU – refractive index unit). Compared with general silicon on-chip nanobeam cavity, the sensitivity is increased by eight times. The additional 1-D PC-NBF will not change the sensitivity and the position of the resonance wavelength. Therefore, the new design we propose addresses the issue of crosstalk, and can be applied to ultra-high sensitivity index-based gas sensing and biosensing without the need for complicated coupling systems.


2017 ◽  
Vol 37 (6) ◽  
pp. 0616001
Author(s):  
蒋 强 Jiang Qiang ◽  
陈家璧 Chen Jiabi ◽  
梁斌明 Liang Binming ◽  
王 燕 Wang Yan ◽  
庄松林 Zhuang Songlin

2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Arun Kumar ◽  
Vipin Kumar ◽  
B. Suthar ◽  
A. Bhargava ◽  
Kh. S. Singh ◽  
...  

Transmission characteristics of one-dimensional photonic crystal structure with a defect have been studied. Transfer matrix method has been employed to find the transmission spectra of the proposed structure. We consider a Si/air multilayer system and refractive index of Si layer has been taken as temperature dependent. As the refractive index of Si layer is a function of temperature of medium, so the central wavelength of the defect mode is a function of temperature. Variation in temperature causes the shifting of defect modes. It is found that the average change or shift in central wavelength of defect modes is 0.064 nm/K. This property can be exploited in the design of a temperature sensor.


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