Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs
2008 ◽
Vol 57
(11)
◽
pp. 7238
Xi Guang-Yi
◽
Ren Fan
◽
Hao Zhi-Biao
◽
Wang Lai
◽
Li Hong-Tao
◽
...
H.S. Kang
◽
C.H. Won
◽
D.S. Kim
◽
S.M. Jeon
◽
Y.J. Kim
◽
...
2019 ◽
Vol 28
(10)
◽
pp. 107301
◽
Mei Ge
◽
Qing Cai
◽
Bao-Hua Zhang
◽
Dun-Jun Chen
◽
Li-Qun Hu
◽
...
2017 ◽
Vol 215
(2)
◽
pp. 1700368
◽
Mei Ge
◽
Qing Cai
◽
Baohua Zhang
◽
Dunjun Chen
◽
Liqun Hu
◽
...
2015 ◽
Vol 212
(8)
◽
pp. 1742-1745
◽
Máire Power
◽
James W. Pomeroy
◽
Yohei Otoki
◽
Takeshi Tanaka
◽
Jiro Wada
◽
...
2010 ◽
Vol 53
(9)
◽
pp. 1578-1581
◽
Yong Wang
◽
NaiSen Yu
◽
DongMei Deng
◽
Ming Li
◽
Fei Sun
◽
...
Y. Ikawa
◽
T. Hosokawa
◽
Y. Kio
◽
J. P. Ao
◽
Y. Ohno
2016 ◽
Vol 13
(5-6)
◽
pp. 341-344
◽
Naohiro Noda
◽
Ryouhei Tsurumaki
◽
Kazushige Horio
2018 ◽
Vol 18
(1)
◽
pp. 46-53
◽
Yasunori Saito
◽
Ryuhei Tsurumaki
◽
Naohiro Noda
◽
Kazushige Horio
2019 ◽
Vol 215
◽
pp. 110985
◽
Ki-Sik Im
◽
Jinseok Choi
◽
Youngmin Hwang
◽
Sung Jin An
◽
Jea-Seung Roh
◽
...
Wataru Saito
◽
Takao Noda
◽
Masahiko Kuraguchi
◽
Yoshiharu Takada
◽
Kunio Tsuda
◽
...