Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs

2017 ◽  
Vol 215 (2) ◽  
pp. 1700368 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Baohua Zhang ◽  
Dunjun Chen ◽  
Liqun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Trap Level ◽  
Gan Hemts ◽  
Gan Buffer Layer

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

2019 ◽  
Vol 28 (10) ◽  
pp. 107301 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Bao-Hua Zhang ◽  
Dun-Jun Chen ◽  
Li-Qun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
H.S. Kang ◽  
C.H. Won ◽  
D.S. Kim ◽  
S.M. Jeon ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Current Collapse ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

2015 ◽  
Vol 212 (8) ◽  
pp. 1742-1745 ◽  
Author(s):  
Máire Power ◽  
James W. Pomeroy ◽  
Yohei Otoki ◽  
Takeshi Tanaka ◽  
Jiro Wada ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

2010 ◽  
Vol 53 (9) ◽  
pp. 1578-1581 ◽  
Author(s):  
Yong Wang ◽  
NaiSen Yu ◽  
DongMei Deng ◽  
Ming Li ◽  
Fei Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Si Substrates ◽  
Gan Hemts ◽  
Gan Buffer Layer ◽  
Mg Doped

scholarly journals Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

2008 ◽  
Vol 57 (11) ◽  
pp. 7238
Author(s):  
Xi Guang-Yi ◽  
Ren Fan ◽  
Hao Zhi-Biao ◽  
Wang Lai ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Current Collapse ◽  
Gan Hemts ◽  
Dislocation Defects ◽  
Gan Buffer Layer

1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer

2019 ◽  
Vol 215 ◽  
pp. 110985 ◽  
Author(s):  
Ki-Sik Im ◽  
Jinseok Choi ◽  
Youngmin Hwang ◽  
Sung Jin An ◽  
Jea-Seung Roh ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Noise Characteristics ◽  
Gan Hemts ◽  
Gan Buffer Layer

Effect of low-temperature GaN buffer layer on the crystalline quality of subsequent GaN layers grown by MOVPE

2007 ◽  
Vol 298 ◽  
pp. 232-234 ◽  
Author(s):  
K. Hoshino ◽  
N. Yanagita ◽  
M. Araki ◽  
K. Tadatomo
Keyword(s):  
Low Temperature ◽  
Buffer Layer ◽  
Crystalline Quality ◽  
Gan Buffer Layer

The Influence of Growth Temperature on Oxygen Concentration in GaN Buffer Layer

2008 ◽  
Vol 1068 ◽  
Author(s):  
Ewa Dumiszewska ◽  
Wlodek Strupinski ◽  
Piotr Caban ◽  
Marek Wesolowski ◽  
Dariusz Lenkiewicz ◽  
...  
Keyword(s):  
High Temperature ◽  
Buffer Layer ◽  
Oxygen Concentration ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Buffer Layers ◽  
Crystalline Quality ◽  
Temperature Growth ◽  
Gan Buffer Layer

ABSTRACTThe influence of growth temperature on oxygen incorporation into GaN epitaxial layers was studied. GaN layers deposited at low temperatures were characterized by much higher oxygen concentration than those deposited at high temperature typically used for epitaxial growth. GaN buffer layers (HT GaN) about 1 μm thick were deposited on GaN nucleation layers (NL) with various thicknesses. The influence of NL thickness on crystalline quality and oxygen concentration of HT GaN layers were studied using RBS and SIMS. With increasing thickness of NL the crystalline quality of GaN buffer layers deteriorates and the oxygen concentration increases. It was observed that oxygen atoms incorporated at low temperature in NL diffuse into GaN buffer layer during high temperature growth as a consequence GaN NL is the source for unintentional oxygen doping.

Effect of N/Ga Flux Ratio in GaN Buffer Layer Growth by MBE on (0001) Sapphire on Defect Formation in the GaN Main Layer

1999 ◽  
Vol 572 ◽  
Author(s):  
S. Ruvimov ◽  
Z. Liliental-Weber ◽  
J. Washburn ◽  
Y. Kim ◽  
G. S. Sudhir ◽  
...  
Keyword(s):  
Dislocation Density ◽  
Buffer Layer ◽  
Defect Formation ◽  
Flux Ratio ◽  
Growth Conditions ◽  
Buffer Layers ◽  
Simultaneous Increase ◽  
Growth Stages ◽  
Dislocation Generation ◽  
Gan Buffer Layer

ABSTRACTTransmission electron microscopy was employed to study the effect of N/Ga flux ratio in the growth of GaN buffer layers on the structure of GaN epitaxial layers grown by molecular-beamepitaxy (MBE) on sapphire. The dislocation density in GaN layers was found to increase from 1×1010 to 6×1010 cm−2 with increase of the nitrogen flux from 5 to 35 sccm during the growth of the GaN buffer layer with otherwise the same growth conditions. All GaN layers were found to contain inversion domain boundaries (IDBs) originated at the interface with sapphire and propagated up to the layer surface. Formation of IDBs was often associated with specific defects at the interface with the substrate. Dislocation generation and annihilation were shown to be mainly growth-related processes and, hence, can be controlled by the growth conditions, especially during the first growth stages. The decrease of electron Hall mobility and the simultaneous increase of the intensity of “green” luminescence with increasing dislocation density suggest that dislocation-related deep levels are created in the bandgap.

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