Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

ABSTRACTWe investigated an AlGaN/GaN heterostructure field effect transistor (HFET) on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system. It was confirmed that a GaN film with smooth surface and without any crack was obtained. To increase a resistance of a GaN buffer layer, the carbon (C) -doping was carried out by controlling the V/III ratio and the growth pressure. The breakdown voltage of the buffer layer was dramatically improved by introducing the C. As a result, the breakdown voltage was about 900 V when the C concentration was about ∼8×1018 cm−3. After while, an AlGaN/GaN heterojunction FET (HFET) on a C-doped GaN buffer layer was fabricated. We achieved the breakdown voltage of over 1000 V and the maximum drain current of over 150 mA/mm, respectively. It was found that the C doped buffer layer is very effective for improving the breakdown voltage of AlGaN/GaN HFETs.

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Low-leakage-current AlGaN/GaN HEMTs on Si substrates with partially Mg-doped GaN buffer layer by metal organic chemical vapor deposition

Chinese Physics B ◽

10.1088/1674-1056/23/3/038403 ◽

2014 ◽

Vol 23 (3) ◽

pp. 038403 ◽

Cited By ~ 4

Author(s):

Ming Li ◽

Yong Wang ◽

Kai-Ming Wong ◽

Kei-May Lau

Keyword(s):

Chemical Vapor ◽

Organic Chemical ◽

Si Substrates ◽

Low Leakage ◽

Low Leakage Current ◽

Metal Organic ◽

Gan Hemts ◽

Organic Chemical Vapor Deposition ◽

Gan Buffer Layer ◽

Mg Doped

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Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

Science Intensive Technologies ◽

10.18127/j19998465-202102-02 ◽

2021 ◽

Author(s):

Than Phyo Kyaw

Keyword(s):

Buffer Layer ◽

Layer Thickness ◽

Breakdown Voltage ◽

Carbon Doping ◽

Avalanche Breakdown ◽

Gate Length ◽

20 Nm ◽

Gan Buffer Layer ◽

Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

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Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

Chinese Physics B ◽

10.1088/1674-1056/ab3e00 ◽

2019 ◽

Vol 28 (10) ◽

pp. 107301 ◽

Cited By ~ 1

Author(s):

Mei Ge ◽

Qing Cai ◽

Bao-Hua Zhang ◽

Dun-Jun Chen ◽

Li-Qun Hu ◽

...

Keyword(s):

Buffer Layer ◽

Gan Hemts ◽

Gan Buffer Layer

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Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

10.7567/ssdm.2013.j-4-3 ◽

2013 ◽

Author(s):

H.S. Kang ◽

C.H. Won ◽

D.S. Kim ◽

S.M. Jeon ◽

Y.J. Kim ◽

...

Keyword(s):

Buffer Layer ◽

Carbon Doped ◽

Current Collapse ◽

Gan Hemts ◽

Gan Buffer Layer

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Enhancement of Breakdown Voltage in AlGaN/GaN HEMTs: Field Plate Plus High- ${k}$ Passivation Layer and High Acceptor Density in Buffer Layer

IEEE Transactions on Electron Devices ◽

10.1109/ted.2018.2857774 ◽

2018 ◽

Vol 65 (9) ◽

pp. 3848-3854 ◽

Cited By ~ 17

Author(s):

Toshiki Kabemura ◽

Shingo Ueda ◽

Yuki Kawada ◽

Kazushige Horio

Keyword(s):

Buffer Layer ◽

Breakdown Voltage ◽

Passivation Layer ◽

Field Plate ◽

Gan Hemts

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Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.442.16 ◽

2012 ◽

Vol 442 ◽

pp. 16-20

Author(s):

Yong Wang ◽

Nai Sen Yu ◽

Ming Li ◽

Kei May Lau

Keyword(s):

Surface Morphology ◽

Buffer Layer ◽

Chemical Vapor ◽

High Resistivity ◽

Organic Chemical ◽

Good Surface ◽

Metal Organic ◽

Dc Current ◽

Gan Buffer Layer ◽

Mg Doped

The continuous 1.0 µm GaN epilayers with and without partially Mg-doped were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The DC current-voltage (I-V), time-of-flying secondary ion mass spectrometer (ToF-SIMS) and atomic force microscope (AFM) measurements were employed for comparison to characterize surface morphology and resistivity of GaN buffer layer with and without partially Mg-doped. The sample of 1.0 µm GaN epilayer with partially Mg-doped shows much higher resistivity than sample without Mg-doped, which indicates the partially Mg doping in 1.0 µm GaN epilayer can effectively increase the resistivity of GaN grown on Si (111) substrates. As a result, the high resistivity GaN buffer layer with good surface morphology is achieved in the partially Mg-doped GaN buffer layer.

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