Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

2010 ◽  
Vol 53 (9) ◽  
pp. 1578-1581 ◽  
Author(s):  
Yong Wang ◽  
NaiSen Yu ◽  
DongMei Deng ◽  
Ming Li ◽  
Fei Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Si Substrates ◽  
Gan Hemts ◽  
Gan Buffer Layer ◽  
Mg Doped

Fabrication of AlGaN/GaN HFET with a High Breakdown Voltage on 4-inch Si (111) Substrate by MOVPE

2006 ◽  
Vol 955 ◽  
Author(s):  
Yuki Niiyama ◽  
Sadahiro Kato ◽  
Yoshihiro Sato ◽  
Masayuki Iwami ◽  
Jiang Li ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Growth Pressure ◽  
Si Substrates ◽  
Effect Transistor ◽  
Gan Heterostructure ◽  
Gan Film ◽  
Gan Buffer Layer

ABSTRACTWe investigated an AlGaN/GaN heterostructure field effect transistor (HFET) on Si substrates using a multi-wafer metalorganic vapor phase epitaxy (MOVPE) system. It was confirmed that a GaN film with smooth surface and without any crack was obtained. To increase a resistance of a GaN buffer layer, the carbon (C) -doping was carried out by controlling the V/III ratio and the growth pressure. The breakdown voltage of the buffer layer was dramatically improved by introducing the C. As a result, the breakdown voltage was about 900 V when the C concentration was about ∼8×1018 cm−3. After while, an AlGaN/GaN heterojunction FET (HFET) on a C-doped GaN buffer layer was fabricated. We achieved the breakdown voltage of over 1000 V and the maximum drain current of over 150 mA/mm, respectively. It was found that the C doped buffer layer is very effective for improving the breakdown voltage of AlGaN/GaN HFETs.

Investigation of the effect of doping the GaN buffer layer with carbon on the avalanche breakdown effect of normally open HEMT AlGaN/AlN/GaN transistors

2021 ◽  
Author(s):  
Than Phyo Kyaw
Keyword(s):  
Buffer Layer ◽  
Layer Thickness ◽  
Breakdown Voltage ◽  
Carbon Doping ◽  
Avalanche Breakdown ◽  
Gate Length ◽  
20 Nm ◽  
Gan Buffer Layer ◽  
Effect Of Doping

The influence of the GaN buffer layer doped with carbon on the avalanche breakdown effect of normally open HEMT AlGaN / AlN / GaN transistors was studied. The avalanche breakdown was simulated in a structure where the gate length is LG = 0.3 mkm, the distance between the source and gate is LSG = 1.5 mkm, and the distance between the gate and drain is LGD = 2.2 mkm. For modeling, consider a layer doped with carbon, the thickness of which is 0.3 mkm, and the layer is located at a distance of 20 nm from the channel. The Simulation showed that with an increase in the concentration of carbon doping of the buffer, the breakdown voltage increases in the range UB = 225 – 360 (V). When the layer thickness changes to 0.4 mkm, the breakdown voltage increases in the range UB = 230 – 446 (V). For a structure where the gate length is LG = 0.8 mkm, the distance between the source and the gate is LSG = 1.0 mkm, the distance between the gate and drain is LGD = 3.0 mkm, the breakdown voltage increases in the range UB = 300 – 622 (V).

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

2019 ◽  
Vol 28 (10) ◽  
pp. 107301 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Bao-Hua Zhang ◽  
Dun-Jun Chen ◽  
Li-Qun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
H.S. Kang ◽  
C.H. Won ◽  
D.S. Kim ◽  
S.M. Jeon ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Current Collapse ◽  
Gan Hemts ◽  
Gan Buffer Layer

Improved Resistivity of GaN with Partially Mg-Doped Grown on Si(111) Substrates by MOCVD

2012 ◽  
Vol 442 ◽  
pp. 16-20
Author(s):  
Yong Wang ◽  
Nai Sen Yu ◽  
Ming Li ◽  
Kei May Lau
Keyword(s):  
Surface Morphology ◽  
Buffer Layer ◽  
Chemical Vapor ◽  
High Resistivity ◽  
Organic Chemical ◽  
Good Surface ◽  
Metal Organic ◽  
Dc Current ◽  
Gan Buffer Layer ◽  
Mg Doped

The continuous 1.0 µm GaN epilayers with and without partially Mg-doped were grown on Si (111) substrates by metal organic chemical vapor deposition (MOCVD). The DC current-voltage (I-V), time-of-flying secondary ion mass spectrometer (ToF-SIMS) and atomic force microscope (AFM) measurements were employed for comparison to characterize surface morphology and resistivity of GaN buffer layer with and without partially Mg-doped. The sample of 1.0 µm GaN epilayer with partially Mg-doped shows much higher resistivity than sample without Mg-doped, which indicates the partially Mg doping in 1.0 µm GaN epilayer can effectively increase the resistivity of GaN grown on Si (111) substrates. As a result, the high resistivity GaN buffer layer with good surface morphology is achieved in the partially Mg-doped GaN buffer layer.

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs

2017 ◽  
Vol 215 (2) ◽  
pp. 1700368 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Baohua Zhang ◽  
Dunjun Chen ◽  
Liqun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Trap Level ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

2015 ◽  
Vol 212 (8) ◽  
pp. 1742-1745 ◽  
Author(s):  
Máire Power ◽  
James W. Pomeroy ◽  
Yohei Otoki ◽  
Takeshi Tanaka ◽  
Jiro Wada ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

2008 ◽  
Vol 57 (11) ◽  
pp. 7238
Author(s):  
Xi Guang-Yi ◽  
Ren Fan ◽  
Hao Zhi-Biao ◽  
Wang Lai ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Current Collapse ◽  
Gan Hemts ◽  
Dislocation Defects ◽  
Gan Buffer Layer
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