Effect of multiple carbon-doped/undoped GaN buffer layer on current collapse in AlGaN/GaN HEMTs

2013 ◽  
Author(s):  
H.S. Kang ◽  
C.H. Won ◽  
D.S. Kim ◽  
S.M. Jeon ◽  
Y.J. Kim ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Current Collapse ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Influence of pit defects on AlGaN surface and dislocation defects in GaN buffer layer on current collapse of AlGaN/GaN HEMTs

2008 ◽  
Vol 57 (11) ◽  
pp. 7238
Author(s):  
Xi Guang-Yi ◽  
Ren Fan ◽  
Hao Zhi-Biao ◽  
Wang Lai ◽  
Li Hong-Tao ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Current Collapse ◽  
Gan Hemts ◽  
Dislocation Defects ◽  
Gan Buffer Layer

1/f noise characteristics of AlGaN/GaN HEMTs with periodically carbon-doped GaN buffer layer

2019 ◽  
Vol 215 ◽  
pp. 110985 ◽  
Author(s):  
Ki-Sik Im ◽  
Jinseok Choi ◽  
Youngmin Hwang ◽  
Sung Jin An ◽  
Jea-Seung Roh ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Carbon Doped ◽  
Noise Characteristics ◽  
Gan Hemts ◽  
Gan Buffer Layer

Impact of Multi-Layer Carbon-Doped/Undoped GaN Buffer on Suppression of Current Collapse in AlGaN/GaN HFETs

2014 ◽  
Vol 23 (03n04) ◽  
pp. 1450017 ◽  
Author(s):  
Hee-Sung Kang ◽  
Dong-Seok Kim ◽  
Chul-Ho Won ◽  
Young-Jo Kim ◽  
Young Jun Yoon ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Field Effect Transistors ◽  
Total Carbon ◽  
Structural Quality ◽  
Deep Acceptor ◽  
Carbon Doped ◽  
Current Collapse ◽  
Possible Cause ◽  
Gan Buffer Layer ◽  
Buffer Structure

We present a new semi-insulating GaN buffer layer, which consists of multiple carbon-doped and undoped GaN layers, suitable for AlGaN / AlN / GaN heterojunction field effect transistors. The proposed buffer structure was designed to minimize the total carbon incorporation into the buffer layer because carbon atoms in GaN are a possible cause of deterioration in structural quality and device characteristics such as current collapse. With this new buffer structure, current collapse in GaN MISHFET is drastically reduced while maintaining high breakdown characteristics. We argue that electron transfer from the undoped GaN to the carbon-doped GaN layer leads to total depletion of the undoped GaN layer and effectively compensates the deep-acceptor states in the carbon-doped GaN layer. This mechanism results in high-insulating buffer characteristic and opens the avenue for current collapse suppression in AlGaN / AlN / GaN MISHFET.

Negative transconductance effect in p-GaN gate AlGaN/GaN HEMTs by traps in unintentionally doped GaN buffer layer

2019 ◽  
Vol 28 (10) ◽  
pp. 107301 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Bao-Hua Zhang ◽  
Dun-Jun Chen ◽  
Li-Qun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Carbon doped GaN buffer layer using propane for high electron mobility transistor applications: Growth and device results

2015 ◽  
Vol 107 (26) ◽  
pp. 262105 ◽  
Author(s):  
X. Li ◽  
J. Bergsten ◽  
D. Nilsson ◽  
Ö. Danielsson ◽  
H. Pedersen ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Carbon Doped ◽  
Gan Buffer Layer

Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p-GaN Gate AlGaN/GaN HEMTs

2017 ◽  
Vol 215 (2) ◽  
pp. 1700368 ◽  
Author(s):  
Mei Ge ◽  
Qing Cai ◽  
Baohua Zhang ◽  
Dunjun Chen ◽  
Liqun Hu ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Trap Level ◽  
Gan Hemts ◽  
Gan Buffer Layer

scholarly journals Measuring the thermal conductivity of the GaN buffer layer in AlGaN/GaN HEMTs

2015 ◽  
Vol 212 (8) ◽  
pp. 1742-1745 ◽  
Author(s):  
Máire Power ◽  
James W. Pomeroy ◽  
Yohei Otoki ◽  
Takeshi Tanaka ◽  
Jiro Wada ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Buffer Layer ◽  
Gan Hemts ◽  
Gan Buffer Layer

Improved breakdown voltage of AlGaN/GaN HEMTs grown on Si substrates using partially Mg-doped GaN buffer layer by MOCVD

2010 ◽  
Vol 53 (9) ◽  
pp. 1578-1581 ◽  
Author(s):  
Yong Wang ◽  
NaiSen Yu ◽  
DongMei Deng ◽  
Ming Li ◽  
Fei Sun ◽  
...  
Keyword(s):  
Buffer Layer ◽  
Breakdown Voltage ◽  
Si Substrates ◽  
Gan Hemts ◽  
Gan Buffer Layer ◽  
Mg Doped

Analysis of lags and current collapse in field-plate AlGaN/GaN HEMTs with deep acceptors in a buffer layer

2016 ◽  
Vol 13 (5-6) ◽  
pp. 341-344 ◽  
Author(s):  
Naohiro Noda ◽  
Ryouhei Tsurumaki ◽  
Kazushige Horio
Keyword(s):  
Buffer Layer ◽  
Field Plate ◽  
Current Collapse ◽  
Gan Hemts
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