Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions

Japanese Journal of Applied Physics ◽

10.7567/1347-4065/ab040a ◽

2019 ◽

Vol 58 (SC) ◽

pp. SC1014 ◽

Author(s):

Yuki Seta ◽

Abdul Muizz Pradipto ◽

Toru Akiyama ◽

Kohji Nakamura ◽

Tomonori Ito ◽

...

Keyword(s):

Thermodynamic Analysis ◽

Vapor Phase ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Optimization of growth conditions for undoped and doped GaAs layers using an empirical model of metalorganic vapor phase epitaxy

Inorganic Materials ◽

10.1134/s0020168510010012 ◽

2010 ◽

Vol 46 (1) ◽

pp. 1-5 ◽

Author(s):

D. E. Arbenin ◽

E. V. Burlyaeva ◽

A. A. Marmalyuk

Keyword(s):

Vapor Phase ◽

Empirical Model ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00349-8 ◽

1999 ◽

Vol 207 (1-2) ◽

pp. 15-19 ◽

Author(s):

A Bchetnia ◽

A Rebey ◽

T Boufaden ◽

B El Jani

Keyword(s):

Growth Rate ◽

Thermodynamic Analysis ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Rate Reduction ◽

Growth Rate Reduction

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Effect of Growth Conditions on Electrical Properties of Si-Doped In0.52Al0.48As Grown by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics ◽

10.1143/jjap.38.1048 ◽

1999 ◽

Vol 38 (Part 1, No. 2B) ◽

pp. 1048-1051 ◽

Author(s):

Shu Goto ◽

Takashi Ueda ◽

Tomoyuki Ohshima ◽

Hiroaki Kakinuma

Keyword(s):

Electrical Properties ◽

Vapor Phase ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

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Dependence of carbon incorporation on growth conditions for unintentionally doped AlGaAs during metalorganic vapor-phase epitaxy

Journal of Crystal Growth ◽

10.1016/s0022-0248(99)00144-x ◽

1999 ◽

Vol 204 (1-2) ◽

pp. 10-18 ◽

Author(s):

Katsushi Fujii ◽

Makoto Satoh ◽

Kazushige Kawamura ◽

Hideki Gotoh

Keyword(s):

Vapor Phase ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Carbon Incorporation

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Growth and coalescence control of inclined c-axis polar and semipolar GaN multilayer structures grown on Si(111), Si(112), and Si(115) by metalorganic vapor phase epitaxy

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.4958805 ◽

2016 ◽

Vol 34 (5) ◽

pp. 051504 ◽

Author(s):

Tomasz Szymański ◽

Mateusz Wośko ◽

Bartłomiej Paszkiewicz ◽

Bogdan Paszkiewicz ◽

Regina Paszkiewicz ◽

...

Keyword(s):

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Multilayer Structures ◽

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Thermodynamic analysis of the shape, anisotropy and formation process of InAs/InP(001) quantum dots and quantum sticks grown by metalorganic vapor phase epitaxy

Surface Science ◽

10.1016/j.susc.2006.12.040 ◽

2007 ◽

Vol 601 (13) ◽

pp. 2765-2768 ◽

Author(s):

G. Saint-Girons ◽

A. Michon ◽

I. Sagnes ◽

G. Beaudoin ◽

G. Patriarche

Keyword(s):

Quantum Dots ◽

Thermodynamic Analysis ◽

Vapor Phase ◽

Formation Process ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Shape Anisotropy

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Importance of metalorganic vapor phase epitaxy growth conditions for the fabrication of GaInAsP strained quantum well lasers

Journal of Crystal Growth ◽

10.1016/0022-0248(94)90361-1 ◽

1994 ◽

Vol 143 (1-2) ◽

pp. 7-14 ◽

Author(s):

K. Streubel ◽

J. Wallin ◽

G. Landgren ◽

U. Öhlander ◽

S. Lourdudoss ◽

...

Keyword(s):

Quantum Well ◽

Vapor Phase ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Quantum Well Lasers ◽

Strained Quantum Well

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Thermodynamic analysis of metalorganic vapor phase epitaxy of III–V alloy semiconductors

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90261-7 ◽

1986 ◽

Vol 74 (1) ◽

pp. 172-180 ◽

Author(s):

Hisashi Seki ◽

Akinori Koukitu

Keyword(s):

Thermodynamic Analysis ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy ◽

Alloy Semiconductors

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Influence of growth conditions on the residual strain in thick metalorganic vapor phase epitaxy grown InGaAs epilayers

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films ◽

10.1116/1.580473 ◽

1997 ◽

Vol 15 (1) ◽

pp. 43-47 ◽

Author(s):

P. Maigné

Keyword(s):

Vapor Phase ◽

Residual Strain ◽

Growth Conditions ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/ab68af ◽

2020 ◽

Vol 59 (2) ◽

pp. 028003 ◽

Author(s):

Tsunashi Shimizu ◽

Yuki Seta ◽

Toru Akiyama ◽

Abdul Muizz Pradipto ◽

Kohji Nakamura ◽

...

Keyword(s):

Thermodynamic Analysis ◽

Vapor Phase ◽

Metalorganic Vapor Phase Epitaxy ◽

Vapor Phase Epitaxy

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