Thermodynamic analysis of growth rate reduction by VCl4 during metalorganic vapor-phase epitaxy of GaAs

1999 ◽  
Vol 207 (1-2) ◽  
pp. 15-19 ◽  
Author(s):  
A Bchetnia ◽  
A Rebey ◽  
T Boufaden ◽  
B El Jani
Keyword(s):  
Growth Rate ◽  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Rate Reduction ◽  
Growth Rate Reduction

Publisher’s Note: “Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy” [J. Appl. Phys. 95, 1811 (2004)]

2004 ◽  
Vol 95 (10) ◽  
pp. 5935-5935
Author(s):  
Dobroslav Kindl ◽  
Jana Toušková ◽  
Eduard Hulicius ◽  
Jiřı́ Pangrác ◽  
Tomislav Šimeček ◽  
...  
Keyword(s):  
Growth Rate ◽  
Charge Transport ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

scholarly journals Thermodynamic analysis of semipolar GaN and AlN under metalorganic vapor phase epitaxy growth conditions

2019 ◽  
Vol 58 (SC) ◽  
pp. SC1014 ◽  
Author(s):  
Yuki Seta ◽  
Abdul Muizz Pradipto ◽  
Toru Akiyama ◽  
Kohji Nakamura ◽  
Tomonori Ito ◽  
...  
Keyword(s):  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Growth Conditions ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Semipolar Gan

Influence of growth rate on charge transport in GaSb homojunctions prepared by metalorganic vapor phase epitaxy

2004 ◽  
Vol 95 (4) ◽  
pp. 1811-1815 ◽  
Author(s):  
Dobroslav Kindl ◽  
Jana Toušková ◽  
Eduard Hulicius ◽  
Jiřı́ Pangrác ◽  
Tomislav Šimeček ◽  
...  
Keyword(s):  
Growth Rate ◽  
Charge Transport ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy

The dependence of growth rate of GaN buffer layer on growth parameters by metalorganic vapor-phase epitaxy

1998 ◽  
Vol 193 (1-2) ◽  
pp. 23-27 ◽  
Author(s):  
Xianglin Liu ◽  
Da-Cheng Lu ◽  
Lianshan Wang ◽  
Xiaohui Wang ◽  
Du Wang ◽  
...  
Keyword(s):  
Growth Rate ◽  
Buffer Layer ◽  
Vapor Phase ◽  
Growth Parameters ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy ◽  
Gan Buffer Layer

Thermodynamic analysis for nonpolar III-nitride surfaces under metalorganic vapor-phase epitaxy conditions

2020 ◽  
Vol 59 (2) ◽  
pp. 028003 ◽  
Author(s):  
Tsunashi Shimizu ◽  
Yuki Seta ◽  
Toru Akiyama ◽  
Abdul Muizz Pradipto ◽  
Kohji Nakamura ◽  
...  
Keyword(s):  
Thermodynamic Analysis ◽  
Vapor Phase ◽  
Metalorganic Vapor Phase Epitaxy ◽  
Vapor Phase Epitaxy
Sign in / Sign up

Export Citation Format

Share Document