Due to its suitable band gap, low cost, environmental friendliness, and high electron mobility, ZnO, naturally n-type semiconductor with a wide bandgap (Eg = 3.37 eV), is widely studied, as a window layer of heterojunction solar cells. In this study, the ZnO nanowire arrays were grown on the different ZnO seed layers by hydrothermal method. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and UV-Vis spectra were used to characterize the ZnO nanowire arrays. The results indicate the seed layer can effect the size distribution, density, crystal structure and optical properties of the nanowire arrays.
Erratum: “Tuning optical band gap of vertically aligned ZnO nanowire arrays grown by homoepitaxial electrodeposition” [Appl. Phys. Lett. 90, 103107 (2007)]