Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-κ/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.7567/jjap.51.04dc08 ◽

2012 ◽

Vol 51 (4S) ◽

pp. 04DC08 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Inverter Circuit ◽

Characteristic Fluctuation

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Random Interface-Traps-Induced Electrical Characteristic Fluctuation in 16-nm-Gate High-$\kappa$/Metal Gate Complementary Metal–Oxide–Semiconductor Device and Inverter Circuit

Japanese Journal of Applied Physics ◽

10.1143/jjap.51.04dc08 ◽

2012 ◽

Vol 51 ◽

pp. 04DC08

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Electrical Characteristic ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Interface Traps ◽

Inverter Circuit ◽

Characteristic Fluctuation

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Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack

2012 12th International Workshop on Junction Technology ◽

10.1109/iwjt.2012.6212837 ◽

2012 ◽

Author(s):

Xiaolei Wang ◽

Wenwu Wang ◽

Kai Han ◽

Hong Yang ◽

Jing Zhang ◽

...

Keyword(s):

Band Structure ◽

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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A Two-Layer Stacked Polycrystalline Silicon Thin Film Transistor Complementary Metal Oxide Semiconductor Inverters Using Laser Crystallized Channel with High-kand Metal Gate on Si

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.3091 ◽

2008 ◽

Vol 47 (4) ◽

pp. 3091-3094 ◽

Author(s):

Soon-Young Oh ◽

Chang-Geun Ahn ◽

Jong-Heon Yang ◽

Won-Ju Cho ◽

Moon-Gyu Jang

Keyword(s):

Thin Film ◽

Metal Oxide ◽

Polycrystalline Silicon ◽

Thin Film Transistor ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Silicon Thin Film

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Nanosized-Metal-Grain-Induced Characteristic Fluctuation in 16 nm Complementary Metal–Oxide–Semiconductor Devices and Digital Circuits

Japanese Journal of Applied Physics ◽

10.1143/jjap.50.04dc22 ◽

2011 ◽

Vol 50 (4) ◽

pp. 04DC22 ◽

Author(s):

Yiming Li ◽

Hui-Wen Cheng

Keyword(s):

Metal Oxide ◽

Digital Circuits ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Characteristic Fluctuation

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Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

Applied Physics Letters ◽

10.1063/1.4824422 ◽

2013 ◽

Vol 103 (15) ◽

pp. 153501 ◽

Author(s):

Kankat Ghosh ◽

Sudipta Das ◽

A. Fissel ◽

H. J. Osten ◽

Apurba Laha

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Next Generation ◽

Device Application

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Design and Analysis of Novel Complementary Metal Oxide Semiconductor Inverter Circuit with Integration of N-InGaAs and P-SiGe Vertical Nanowire Transistors

Advanced Science Engineering and Medicine ◽

10.1166/asem.2016.1843 ◽

2016 ◽

Vol 8 (3) ◽

pp. 175-180

Author(s):

Subha Subramaniam ◽

Sangeeta M. Joshi ◽

R. N. Awale

Keyword(s):

Metal Oxide ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Nanowire Transistors ◽

Inverter Circuit

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Demonstration of Y1Ba2Cu3O7−δand complementary metal‐oxide‐semiconductor device fabrication on the same sapphire substrate

Applied Physics Letters ◽

10.1063/1.109758 ◽

1993 ◽

Vol 63 (9) ◽

pp. 1282-1284 ◽

Author(s):

M. J. Burns ◽

P. R. de la Houssaye ◽

S. D. Russell ◽

G. A. Garcia ◽

S. R. Clayton ◽

...

Keyword(s):

Metal Oxide ◽

Sapphire Substrate ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Device Fabrication ◽

Oxide Semiconductor

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Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure

Applied Physics Letters ◽

10.1063/1.3399359 ◽

2010 ◽

Vol 96 (15) ◽

pp. 152907 ◽

Author(s):

Xiaolei Wang ◽

Kai Han ◽

Wenwu Wang ◽

Shijie Chen ◽

Xueli Ma ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Structure ◽

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Adaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide Thickness

Journal of Computer Science ◽

10.3844/jcssp.2012.515.522 ◽

2012 ◽

Vol 8 (4) ◽

pp. 515-522

Author(s):

Valentina

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Complementary Metal Oxide Semiconductor ◽

Oxide Thickness ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Oxide Thickness

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Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure

Journal of Semiconductors ◽

10.1088/1674-4926/36/9/094006 ◽

2015 ◽

Vol 36 (9) ◽

pp. 094006

Author(s):

Kai Han ◽

Xiaolei Wang ◽

Wenwu Wang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Physical Origin ◽

Gate Structure ◽

High K ◽

Flatband Voltage

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