Adaptive Complementary Metal-Oxide-Semiconductor Device by Externally Controlled Gate Oxide Thickness

Gate Oxide ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Gate Oxide Thickness

The electrical and physical analysis of Pt gate/Al2O3/p-Si (100) with dual high-k gate oxide thickness for deep submicron complementary metal-oxide-semiconductor device with low power and high reliability

Journal of Electronic Materials ◽

10.1007/s11664-005-0237-8 ◽

2005 ◽

Vol 34 (8) ◽

pp. 1104-1109 ◽

Cited By ~ 4

Author(s):

Chihoon Lee ◽

Sang Yong No ◽

Da Il Eom ◽

Cheol Seong Hwang ◽

Hyeong Joon Kim

Keyword(s):

Semiconductor Device ◽

High Reliability ◽

Oxide Thickness ◽

Deep Submicron ◽

Oxide Semiconductor ◽

Physical Analysis ◽

High K ◽

Gate Oxide Thickness

Effects of thermal nitrided gate-oxide thickness on 4H silicon-carbide-based metal-oxide-semiconductor characteristics

Applied Physics Letters ◽

10.1063/1.2430308 ◽

2007 ◽

Vol 90 (1) ◽

pp. 012120 ◽

Cited By ~ 28

Author(s):

Kuan Yew Cheong ◽

Wook Bahng ◽

Nam-Kyun Kim

Keyword(s):

Silicon Carbide ◽

Metal Oxide ◽

Gate Oxide ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Gate Oxide Thickness

Compact noise modelling for common double‐gate metal–oxide–semiconductor field‐effect transistor adapted to gate‐oxide‐thickness asymmetry

IET Circuits Devices & Systems ◽

10.1049/iet-cds.2015.0128 ◽

2016 ◽

Vol 10 (1) ◽

pp. 62-67 ◽

Cited By ~ 2

Author(s):

Neha Sharan ◽

Santanu Mahapatra

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Oxide ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Double Gate ◽

Gate Oxide Thickness ◽

Effect Transistor

Dependence of Drain Current on Gate Oxide Thickness of P-Type Vertical PtSi Schottky Source/Drain Metal Oxide Semiconductor Field-Effect Transistors

10.1143/jjap.41.54 ◽

2002 ◽

Vol 41 (Part 1, No. 1) ◽

pp. 54-58 ◽

Cited By ~ 2

Author(s):

Masafumi Tsutsui ◽

Masahiro Asada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Drain Current ◽

Gate Oxide ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Gate Oxide Thickness ◽

P Type

A Novel Thin Gate-Oxide-Thickness Measurement Method by LDD (Lightly-Doped-Drain)- NMOS (N-Channel Metal-Oxide-Semiconductor) Transistors

10.1143/jjap.37.l1 ◽

1998 ◽

Vol 37 (Part 2, No. 1A/B) ◽

pp. L1-L3

Author(s):

Jiaw-Ren Shih ◽

Jian-Hsing Lee ◽

B. K. Liew ◽

Huey-Liang Hwang

Keyword(s):

Metal Oxide ◽

Measurement Method ◽

Gate Oxide ◽

Oxide Thickness ◽

Thickness Measurement ◽

Oxide Semiconductor ◽

Gate Oxide Thickness ◽

Thin Gate Oxide ◽

Lightly Doped Drain

Improved Extrapolation Method of Ultrathin Oxide Thickness Using C-V Characteristics of Metal-Oxide-Semiconductor Device

10.1143/jjap.41.l549 ◽

2002 ◽

Vol 41 (Part 2, No. 5B) ◽

pp. L549-L551

Author(s):

Hyundoek Yang ◽

Hyo Sik Chang ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Thickness ◽

Extrapolation Method ◽

Oxide Semiconductor ◽

Ultrathin Oxide

Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Cited By ~ 6

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor

Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application

Applied Physics Letters ◽

10.1063/1.4824422 ◽

2013 ◽

Vol 103 (15) ◽

pp. 153501 ◽

Cited By ~ 7

Author(s):

Kankat Ghosh ◽

Sudipta Das ◽

A. Fissel ◽

H. J. Osten ◽

Apurba Laha

Keyword(s):

Metal Oxide ◽

Semiconductor Device ◽

Oxide Semiconductor ◽

Next Generation ◽

Device Application

GaAs metal–oxide–semiconductor device with titanium dioxide as dielectric layer: effect of oxide thickness on the device performance

Journal of Physics D Applied Physics ◽

10.1088/0022-3727/44/15/155104 ◽

2011 ◽

Vol 44 (15) ◽

pp. 155104 ◽

Cited By ~ 15

Author(s):

Souvik Kundu ◽

Sandip Kumar Roy ◽

P Banerji

Keyword(s):

Titanium Dioxide ◽

Metal Oxide ◽

Dielectric Layer ◽

Semiconductor Device ◽

Oxide Thickness ◽

Oxide Semiconductor ◽

Device Performance ◽

Layer Effect

Effect of Wet Etched Thickness and Reoxidation on Reliability of Dual Gate Oxide for Sub-Quarter Micron Complementary Metal-Oxide-Semiconductor Devices

10.1143/jjap.39.2167 ◽

2000 ◽

Vol 39 (Part 1, No. 4B) ◽

pp. 2167-2171 ◽

Cited By ~ 1

Author(s):

Ihl Hyun Cho ◽

Nag Kyunn Sung ◽

Jong Hyuk Oh ◽

Min Soo Park ◽

Dong Kyun Sohn ◽

...

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Gate Oxide ◽

Oxide Semiconductor ◽

Dual Gate