Epitaxial Gd2O3 on strained Si1−xGex layers for next generation complementary metal oxide semiconductor device application
2009 ◽
Vol 48
(1)
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pp. 011203
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2008 ◽
Vol 145-146
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pp. 176-186
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2012 ◽
Vol 51
◽
pp. 101203
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2012 ◽
Vol 51
(10R)
◽
pp. 101203
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1999 ◽
Vol 17
(6)
◽
pp. 2630
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