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Physical origin of dipole formation at high-k/SiO2 interface in metal-oxide-semiconductor device with high-k/metal gate structure
Applied Physics Letters
◽
10.1063/1.3399359
◽
2010
◽
Vol 96
(15)
◽
pp. 152907
◽
Cited By ~ 34
Author(s):
Xiaolei Wang
◽
Kai Han
◽
Wenwu Wang
◽
Shijie Chen
◽
Xueli Ma
◽
...
Keyword(s):
Metal Oxide
◽
Semiconductor Device
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Physical Origin
◽
Metal Gate
◽
Gate Structure
◽
High K
Download Full-text
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References
Physical origin investigation of the flatband voltage roll off for metal–oxide–semiconductor device with high-k/metal gate structure
Journal of Semiconductors
◽
10.1088/1674-4926/36/9/094006
◽
2015
◽
Vol 36
(9)
◽
pp. 094006
Author(s):
Kai Han
◽
Xiaolei Wang
◽
Wenwu Wang
Keyword(s):
Metal Oxide
◽
Semiconductor Device
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Physical Origin
◽
Metal Gate
◽
Gate Structure
◽
High K
◽
Flatband Voltage
Download Full-text
Investigation of band structure at metal-gate/high-k interface of metal oxide semiconductor device with high-k and metal gate stack
2012 12th International Workshop on Junction Technology
◽
10.1109/iwjt.2012.6212837
◽
2012
◽
Author(s):
Xiaolei Wang
◽
Wenwu Wang
◽
Kai Han
◽
Hong Yang
◽
Jing Zhang
◽
...
Keyword(s):
Band Structure
◽
Metal Oxide
◽
Semiconductor Device
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Gate Stack
◽
High K
Download Full-text
Lack of correlation between C-V hysteresis and capacitance frequency dispersion in accumulation of metal gate/high-k/n-InGaAs metal-oxide-semiconductor stacks
Journal of Applied Physics
◽
10.1063/1.5031025
◽
2018
◽
Vol 124
(22)
◽
pp. 224102
◽
Cited By ~ 2
Author(s):
S. M. Pazos
◽
F. L. Aguirre
◽
K. Tang
◽
P. McIntyre
◽
F. Palumbo
Keyword(s):
Metal Oxide
◽
Frequency Dispersion
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
Download Full-text
Effect of La$_{2}$O$_{3}$ Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-$k$/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.1143/jjap.51.02bc10
◽
2012
◽
Vol 51
(2)
◽
pp. 02BC10
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Taekyung Oh
◽
Bongkoo Kang
Keyword(s):
Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
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Subnanometer-equivalent-oxide-thickness germanium p-metal-oxide-semiconductor field effect transistors fabricated using molecular-beam-deposited high-k/metal gate stack
Applied Physics Letters
◽
10.1063/1.2189456
◽
2006
◽
Vol 88
(13)
◽
pp. 132107
◽
Cited By ~ 67
Author(s):
A. Ritenour
◽
A. Khakifirooz
◽
D. A. Antoniadis
◽
R. Z. Lei
◽
W. Tsai
◽
...
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Molecular Beam
◽
Field Effect Transistors
◽
Oxide Thickness
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Equivalent Oxide Thickness
◽
Metal Gate
◽
High K
Download Full-text
Inversion-type surface channel In0.53]Ga{in0.47As metal-oxide-semiconductor field-effect transistors with metal-gate/high-k dielectric stack and CMOS-compatible PdGe contacts
2009 International Symposium on VLSI Technology, Systems, and Applications
◽
10.1109/vtsa.2009.5159330
◽
2009
◽
Author(s):
Hock-Chun Chin
◽
Xinke Liu
◽
Leng-Seow Tan
◽
Yee-Chia Yeo
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
High K
◽
Cmos Compatible
◽
High K Dielectric
Download Full-text
Comprehensive understanding of the effect of electric dipole at high-k/SiO2 interface on the flatband voltage shift in metal-oxide-semiconductor device
Applied Physics Letters
◽
10.1063/1.3475774
◽
2010
◽
Vol 97
(6)
◽
pp. 062901
◽
Cited By ~ 19
Author(s):
Xiaolei Wang
◽
Kai Han
◽
Wenwu Wang
◽
Xueli Ma
◽
Dapeng Chen
◽
...
Keyword(s):
Metal Oxide
◽
Electric Dipole
◽
Semiconductor Device
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Comprehensive Understanding
◽
Voltage Shift
◽
High K
◽
Flatband Voltage
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Intrinsic Effects of the Crystal Orientation Difference between (100) and (110) Silicon Substrates on Characteristics of High-k/Metal Gate Metal–Oxide–Semiconductor Field-Effect Transistors
Japanese Journal of Applied Physics
◽
10.7567/jjap.50.061503
◽
2011
◽
Vol 50
(6R)
◽
pp. 061503
◽
Cited By ~ 1
Author(s):
Ryosuke Iijima
◽
Lisa F. Edge
◽
John Bruley
◽
Vamsi Paruchuri
◽
Mariko Takayanagi
Keyword(s):
Metal Oxide
◽
Crystal Orientation
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Silicon Substrates
◽
Metal Gate
◽
High K
◽
Orientation Difference
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Interfacial and Electrical Properties of GaAs Metal-Oxide-Semiconductor Device with TiOxNy High-k Gate Dielectrics
ECS Transactions
◽
10.1149/1.3569925
◽
2019
◽
Vol 35
(3)
◽
pp. 325-332
◽
Cited By ~ 2
Author(s):
T. Das
◽
Chandreswar Mahata
◽
G Sutradhar
◽
P K Bose
◽
C.K. Maiti
Keyword(s):
Electrical Properties
◽
Metal Oxide
◽
Semiconductor Device
◽
Gate Dielectrics
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
High K
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Effect of La2O3Capping Layer Thickness on Hot-Carrier Degradation of n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-k/Metal Gate Stacks
Japanese Journal of Applied Physics
◽
10.7567/jjap.51.02bc10
◽
2012
◽
Vol 51
(2S)
◽
pp. 02BC10
◽
Cited By ~ 2
Author(s):
Dongwoo Kim
◽
Seonhaeng Lee
◽
Cheolgyu Kim
◽
Taekyung Oh
◽
Bongkoo Kang
Keyword(s):
Metal Oxide
◽
Layer Thickness
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Gate Stacks
◽
Metal Gate
◽
Hot Carrier
◽
High K
Download Full-text
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