Residual Clamping Force and Dynamic Random Access Memory Data Retention Improved by Gate Tungsten Etch Dechucking Condition in a Bipolar Electrostatic Chuck
2012 ◽
Vol 51
(8R)
◽
pp. 086502
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Keyword(s):
2012 ◽
Vol 51
◽
pp. 086502
◽
Keyword(s):
Keyword(s):
2002 ◽
Vol 41
(Part 1, No. 12)
◽
pp. 7276-7281
2011 ◽
Vol 50
(4)
◽
pp. 04DD01
◽
Keyword(s):