Impacts of Surface Roughness Reduction in (110) Si Substrates Fabricated by High-Temperature Annealing on Electron Mobility in n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors on (110) Si

2013 ◽  
Vol 52 (4S) ◽  
pp. 04CC26 ◽  
Author(s):  
Sung-Ho Jeon ◽  
Noriyuki Taoka ◽  
Hiroaki Matsumoto ◽  
Kiyotaka Nakano ◽  
Susumu Koyama ◽  
...  
Keyword(s):  
Surface Roughness ◽  
High Temperature ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Temperature Annealing ◽  
Si Substrates

High-Electron-Mobility Ge n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3

2011 ◽  
Vol 4 (6) ◽  
pp. 064201 ◽  
Author(s):  
Tomonori Nishimura ◽  
Choong Hyun Lee ◽  
Toshiyuki Tabata ◽  
Sheng Kai Wang ◽  
Kosuke Nagashio ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Electron ◽  
High Electron Mobility

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

scholarly journals Electron mobility enhancement in strained-germanium n-channel metal-oxide-semiconductor field-effect transistors

2007 ◽  
Vol 91 (10) ◽  
pp. 102103 ◽  
Author(s):  
Y.-J. Yang ◽  
W. S. Ho ◽  
C.-F. Huang ◽  
S. T. Chang ◽  
C. W. Liu
Keyword(s):  
Metal Oxide ◽  
Electron Mobility ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor
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