Enhancement Mode Operation and Ultraviolet Responsivity of n-Channel GaN Metal–Insulator–Semiconductor Field Effect Transistor with Schottky Barrier Source and Drain

2007 ◽  
Vol 46 (4B) ◽  
pp. 2348-2351 ◽  
Author(s):  
Heon-Bok Lee ◽  
Hyun-Ick Cho ◽  
Hyun-Su An ◽  
Jung-Hee Lee ◽  
Sung-Ho Hahm
Keyword(s):  
Schottky Barrier ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation ◽  
Effect Transistor

Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor

2014 ◽  
Vol 105 (8) ◽  
pp. 082110 ◽  
Author(s):  
J. W. Liu ◽  
M. Y. Liao ◽  
M. Imura ◽  
E. Watanabe ◽  
H. Oosato ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Effect Transistor

Fabrication of Enhancement-Mode GaN-Based Metal–Insulator-Semiconductor Field Effect Transistor

2000 ◽  
Vol 622 ◽  
Author(s):  
P. Chen ◽  
R. Zhang ◽  
Y.G. Zhou ◽  
S.Y. Xie ◽  
Z.Y. Luo ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Voltage Measurement ◽  
Device Structure ◽  
Insulator Layer ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Piezoelectric Field ◽  
Effect Transistor

ABSTRACTAn enhancement-mode GaN metal-insulator-semiconductor field-effect transistor was successfully fabricated on a GaN/AlGaN/GaN double heterojunction structure with SiO2 as insulator layer. The enhancement mode DC characteristics have been achieved in the device with a gate length of 6 μm and a gate width of 100 μm. The device exhibited a DC transconductance of 0.6 mS/mm and a maximum drain-source current of 5 mA/mm. The gate leakage current is lower than 10−6 A at a bias of -10 V and the gate breakdown voltage is higher than 20 V. The channel stands a good chance of forming by hole accumulation between the top GaN layer and the AlGaN layer. The p-channel can be attributed to the presence of a piezoelectric field in the heterojunction, and the strongly asymmetric band bending and carriers distribution induced by the piezoelectric field. High-frequency capacitance-voltage measurement also gives a circumstantial evidence of the presence of a p-channel in the device structure.

GaN-on-Si Enhancement Mode Metal Insulator Semiconductor Heterostructure Field Effect Transistor with On-Current of 1.35 A/mm

2013 ◽  
Vol 52 (9R) ◽  
pp. 090204 ◽  
Author(s):  
Herwig Hahn ◽  
Fouad Benkhelifa ◽  
Oliver Ambacher ◽  
Assadullah Alam ◽  
Michael Heuken ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Semiconductor Heterostructure ◽  
Effect Transistor ◽  
Gan On Si

Controlling the threshold voltage of β-Ga2O3 field-effect transistors via remote fluorine plasma treatment

2019 ◽  
Vol 7 (29) ◽  
pp. 8855-8860 ◽  
Author(s):  
Janghyuk Kim ◽  
Marko J. Tadjer ◽  
Michael A. Mastro ◽  
Jihyun Kim
Keyword(s):  
Plasma Treatment ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Gate ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Enhancement Mode ◽  
Mode Operation

The threshold voltage of β-Ga2O3 metal–insulator–semiconductor field-effect transistors is controlled via remote fluorine plasma treatment, enabling an enhancement-mode operation under double gate condition.

A novel Pd/oxide/GaAs metal-insulator-semiconductor field-effect transistor (MISFET) hydrogen sensor

2001 ◽  
Vol 16 (12) ◽  
pp. 997-1001 ◽  
Author(s):  
Kun-Wei Lin ◽  
Chin-Chuan Cheng ◽  
Shiou-Ying Cheng ◽  
Kuo-Hui Yu ◽  
Chih-Kai Wang ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Hydrogen Sensor ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Effect Transistor
Sign in / Sign up

Export Citation Format

Share Document