Experimental Observation of Quantum Confinement Effect in <110> and <100> Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

Ryota Suzuki; Motoki Nozue; Takuya Saraya; Toshiro Hiramoto

doi:10.7567/jjap.52.104001

Experimental Observation of Quantum Confinement Effect in and Silicon Nanowire Field-Effect Transistors and Single-Electron/Hole Transistors Operating at Room Temperature

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.104001 ◽

2013 ◽

Vol 52 (10R) ◽

pp. 104001 ◽

Cited By ~ 1

Author(s):

Ryota Suzuki ◽

Motoki Nozue ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Experimental Observation ◽

Quantum Confinement ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Quantum Confinement Effect ◽

Silicon Nanowire ◽

Confinement Effect ◽

Single Electron ◽

Electron Hole

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Quantum confinement effect in strained-Si1−xGex double-gate tunnel field-effect transistors

Proceedings of 2013 International Conference on IC Design & Technology (ICICDT) ◽

10.1109/icicdt.2013.6563306 ◽

2013 ◽

Cited By ~ 1

Author(s):

Nguyen Dang Chien ◽

Chun-Hsing Shih ◽

Luu The Vinh ◽

Nguyen Van Kien

Keyword(s):

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Quantum Confinement Effect ◽

Confinement Effect ◽

Double Gate ◽

Strained Si

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Reinvestigation of dot formation mechanisms in silicon nanowire channel single-electron/hole transistors operating at room temperature

2012 IEEE Silicon Nanoelectronics Workshop (SNW) ◽

10.1109/snw.2012.6243337 ◽

2012 ◽

Author(s):

Ryota Suzuki ◽

Motoki Nozue ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Room Temperature ◽

Silicon Nanowire ◽

Single Electron ◽

Formation Mechanisms ◽

Electron Hole

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Single-electron counting statistics and its circuit application in nanoscale field-effect transistors at room temperature

Nanotechnology ◽

10.1088/0957-4484/20/17/175201 ◽

2009 ◽

Vol 20 (17) ◽

pp. 175201 ◽

Cited By ~ 17

Author(s):

K Nishiguchi ◽

A Fujiwara

Keyword(s):

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Single Electron ◽

Electron Counting ◽

Counting Statistics

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Reduced quantum confinement effect and electron-hole separation in SiGe nanowires

Physical Review B ◽

10.1103/physrevb.79.201302 ◽

2009 ◽

Vol 79 (20) ◽

Cited By ~ 43

Author(s):

Michele Amato ◽

Maurizia Palummo ◽

Stefano Ossicini

Keyword(s):

Quantum Confinement ◽

Quantum Confinement Effect ◽

Confinement Effect ◽

Electron Hole

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Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors

Journal of Applied Physics ◽

10.1063/1.2874247 ◽

2008 ◽

Vol 103 (5) ◽

pp. 053709 ◽

Cited By ~ 55

Author(s):

Masaharu Kobayashi ◽

Toshiro Hiramoto

Keyword(s):

Experimental Study ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Electron Transistors ◽

Quantum Confinement Effects ◽

Electron Transistors

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Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain

Journal of Applied Physics ◽

10.1063/1.3115448 ◽

2009 ◽

Vol 105 (8) ◽

pp. 084514 ◽

Cited By ~ 12

Author(s):

YeonJoo Jeong ◽

Kousuke Miyaji ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Field Effect ◽

Tensile Strain ◽

Room Temperature ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Single Electron Transistors ◽

Electron Transistors

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Room-Temperature Quantum Confinement Effects in Transport Properties of Ultrathin Si Nanowire Field-Effect Transistors

Nano Letters ◽

10.1021/nl203238e ◽

2011 ◽

Vol 11 (12) ◽

pp. 5465-5470 ◽

Cited By ~ 54

Author(s):

Kyung Soo Yi ◽

Krutarth Trivedi ◽

Herman C. Floresca ◽

Hyungsang Yuk ◽

Walter Hu ◽

...

Keyword(s):

Transport Properties ◽

Quantum Confinement ◽

Field Effect ◽

Room Temperature ◽

Field Effect Transistors ◽

Confinement Effects ◽

Si Nanowire ◽

Quantum Confinement Effects

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Strong dependence of tunneling transport properties on overdriving voltage for room-temperature-operating single electron/hole transistors formed with ultranarrow [100] silicon nanowire channel

Applied Physics Letters ◽

10.1063/1.2958224 ◽

2008 ◽

Vol 93 (4) ◽

pp. 043508 ◽

Cited By ~ 8

Author(s):

Sejoon Lee ◽

Toshiro Hiramoto

Keyword(s):

Transport Properties ◽

Room Temperature ◽

Silicon Nanowire ◽

Strong Dependence ◽

Single Electron ◽

Electron Hole ◽

Temperature Operating ◽

Tunneling Transport

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Enhancement of electron-hole exchange interaction in CdSe nanocrystals: A quantum confinement effect

Physical Review B ◽

10.1103/physrevb.53.1336 ◽

1996 ◽

Vol 53 (3) ◽

pp. 1336-1342 ◽

Cited By ~ 123

Author(s):

M. Chamarro ◽

C. Gourdon ◽

P. Lavallard ◽

O. Lublinskaya ◽

A. I. Ekimov

Keyword(s):

Exchange Interaction ◽

Quantum Confinement ◽

Quantum Confinement Effect ◽

Confinement Effect ◽

Cdse Nanocrystals ◽

Electron Hole

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Bandgap shift by quantum confinement effect in 〈100〉 Si-nanowires derived from threshold-voltage shift of fabricated metal-oxide-semiconductor field effect transistors and theoretical calculations

Journal of Applied Physics ◽

10.1063/1.3559265 ◽

2011 ◽

Vol 109 (6) ◽

pp. 064312 ◽

Cited By ~ 5

Author(s):

Hironori Yoshioka ◽

Naoya Morioka ◽

Jun Suda ◽

Tsunenobu Kimoto

Keyword(s):

Threshold Voltage ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Theoretical Calculations ◽

Quantum Confinement Effect ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Si Nanowires ◽

Threshold Voltage Shift

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