Experimental study on quantum confinement effects in silicon nanowire metal-oxide-semiconductor field-effect transistors and single-electron transistors

Journal of Applied Physics ◽

10.1063/1.2874247 ◽

2008 ◽

Vol 103 (5) ◽

pp. 053709 ◽

Author(s):

Masaharu Kobayashi ◽

Toshiro Hiramoto

Keyword(s):

Experimental Study ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Single Electron Transistors ◽

Quantum Confinement Effects ◽

Electron Transistors

Download Full-text

Silicon nanowire n-type metal-oxide-semiconductor field-effect transistors and single-electron transistors at room temperature under uniaxial tensile strain

Journal of Applied Physics ◽

10.1063/1.3115448 ◽

2009 ◽

Vol 105 (8) ◽

pp. 084514 ◽

Author(s):

YeonJoo Jeong ◽

Kousuke Miyaji ◽

Takuya Saraya ◽

Toshiro Hiramoto

Keyword(s):

Field Effect ◽

Tensile Strain ◽

Room Temperature ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Uniaxial Tensile ◽

Single Electron Transistors ◽

Electron Transistors

Download Full-text

Study of quantum confinement effects on hole mobility in silicon and germanium double gate metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.3244205 ◽

2009 ◽

Vol 95 (14) ◽

pp. 142103 ◽

Author(s):

Chun-Jung Tang ◽

Tahui Wang ◽

Chih-Sheng Chang

Keyword(s):

Metal Oxide ◽

Quantum Confinement ◽

Field Effect ◽

Field Effect Transistors ◽

Hole Mobility ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Quantum Confinement Effects ◽

Silicon And Germanium

Download Full-text

Suppression of Effects of Parasitic Metal-Oxide-Semiconductor Field-Effect Transistors on Si Single-Electron Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.37.3257 ◽

1998 ◽

Vol 37 (Part 1, No. 6A) ◽

pp. 3257-3263 ◽

Author(s):

Akira Fujiwara ◽

Yasuo Takahashi ◽

Hideo Namatsu ◽

Kenji Kurihara ◽

Katsumi Murase

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Single Electron ◽

Oxide Semiconductor ◽

Single Electron Transistors ◽

Electron Transistors

Download Full-text

Experimental Study on Performance Improvement in Dopant-Segregated Schottky Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.99 ◽

2008 ◽

Vol 47 (1) ◽

pp. 99-103 ◽

Author(s):

Yoshifumi Nishi ◽

Atsuhiro Kinoshita ◽

Daisuke Hagishima ◽

Junji Koga

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Performance Improvement ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Experimental Study of Effective Carrier Mobility of Multi-Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors with (111) Channel Surface Fabricated by Orientation-Dependent Wet Etching

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.3084 ◽

2006 ◽

Vol 45 (4B) ◽

pp. 3084-3087 ◽

Author(s):

Yongxun Liu ◽

Etsuro Sugimata ◽

Kenichi Ishii ◽

Meishoku Masahara ◽

Kazuhiko Endo ◽

...

Keyword(s):

Experimental Study ◽

Field Effect ◽

Carrier Mobility ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Wet Etching ◽

Oxide Semiconductor ◽

Double Gate ◽

Channel Surface ◽

Effective Carrier

Download Full-text

Experimental study on vertical scaling of InAs-on-insulator metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.4885765 ◽

2014 ◽

Vol 104 (26) ◽

pp. 263507 ◽

Author(s):

SangHyeon Kim ◽

Masafumi Yokoyama ◽

Ryosho Nakane ◽

Osamu Ichikawa ◽

Takenori Osada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Vertical Scaling

Download Full-text

Experimental Study of Physical-Vapor-Deposited Titanium Nitride Gate with An n+-Polycrystalline Silicon Capping Layer and Its Application to 20 nm Fin-Type Double-Gate Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.04dc14 ◽

2011 ◽

Vol 50 (4S) ◽

pp. 04DC14 ◽

Author(s):

Takahiro Kamei ◽

Yongxun Liu ◽

Kazuhiko Endo ◽

Shinichi O'uchi ◽

Junichi Tsukada ◽

...

Keyword(s):

Experimental Study ◽

Metal Oxide ◽

Titanium Nitride ◽

Polycrystalline Silicon ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Double Gate ◽

Download Full-text

A Reliable Extraction Method for Source and Drain Series Resistances in Silicon Nanowire Metal-Oxide-Semiconductor Field-Effect-Transistors (MOSFETs) Based on Radio-Frequency Analysis

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2014.9884 ◽

2014 ◽

Vol 14 (11) ◽

pp. 8219-8224

Author(s):

Jae Hwa Seo ◽

Young Jun Yoon ◽

Hwan Gi Lee ◽

Gwan Min Yoo ◽

Eou-Sik Cho ◽

...

Keyword(s):

Metal Oxide ◽

Radio Frequency ◽

Frequency Analysis ◽

Extraction Method ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text

Fabrication of Highly Scaled Silicon Nanowire Gate-All-Around Metal–Oxide–Semiconductor Field Effect Transistors by Using Self-Aligned Local-Channel V-gate by Optical Lithography Process

Japanese Journal of Applied Physics ◽

10.1143/jjap.49.084203 ◽

2010 ◽

Vol 49 (8) ◽

pp. 084203 ◽

Author(s):

Jae Hyun Park ◽

Jae Young Song ◽

Jong Pil Kim ◽

Sang Wan Kim ◽

Jang-Gn Yun ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Optical Lithography ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Lithography Process

Download Full-text

Experimental evidence of ballistic transport in cylindrical gate-all-around twin silicon nanowire metal-oxide-semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.2840187 ◽

2008 ◽

Vol 92 (5) ◽

pp. 052102 ◽

Author(s):

K. H. Cho ◽

K. H. Yeo ◽

Y. Y. Yeoh ◽

S. D. Suk ◽

M. Li ◽

...

Keyword(s):

Metal Oxide ◽

Experimental Evidence ◽

Field Effect ◽

Field Effect Transistors ◽

Silicon Nanowire ◽

Ballistic Transport ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

Download Full-text