First Small-Signal Data of GaN-Based p-Channel Heterostructure Field Effect Transistors

2013 ◽  
Vol 52 (12R) ◽  
pp. 128001 ◽  
Author(s):  
Herwig Hahn ◽  
Benjamin Reuters ◽  
Alexander Pooth ◽  
Achim Noculak ◽  
Holger Kalisch ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Small Signal ◽  
Heterostructure Field Effect Transistors

Microwave operation of GaN/AlGaN-doped channel heterostructure field effect transistors

1996 ◽  
Vol 17 (7) ◽  
pp. 325-327 ◽  
Author(s):  
M.A. Khan ◽  
Q. Chen ◽  
J.W. Yang ◽  
M.S. Shur ◽  
B.T. Dermott ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Heterostructure Field Effect Transistors

AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field-Effect Transistors (MOSHFETs) with the Delta-Doped Barrier Layer

2002 ◽  
Vol 743 ◽  
Author(s):  
Z. Y. Fan ◽  
J. Li ◽  
J. Y. Lin ◽  
H. X. Jiang ◽  
Y. Liu ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Cutoff Frequency ◽  
Drain Current ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Semiconductor Heterostructure ◽  
Heterostructure Field Effect Transistors ◽  
Gate Control

ABSTRACTThe fabrication and characterization of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOSHFETs) with the δ-doped barrier are reported. The incorporation of the SiO2 insulated-gate and the δ-doped barrier into HFET structures reduces the gate leakage and improves the 2D channel carrier mobility. The device has a high drain-current-driving and gate-control capabilities as well as a very high gate-drain breakdown voltage of 200 V, a cutoff frequency of 15 GHz and a maximum frequency of oscillation of 34 GHz for a gate length of 1 μm. These characteristics indicate a great potential of this structure for high-power-microwave applications.

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