Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/fnoise measurements

2014 ◽  
Vol 53 (4S) ◽  
pp. 04EC14 ◽  
Author(s):  
Tsung-Hsien Kao ◽  
San-Lein Wu ◽  
Kai-Shiang Tsai ◽  
Yean-Kuen Fang ◽  
Chien-Ming Lai ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Metal Gate ◽  
Random Telegraph Noise ◽  
Aluminum Ion ◽  
High K ◽  
Telegraph Noise

Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs

2018 ◽  
Vol 13 (4) ◽  
pp. 454-457
Author(s):  
Tsung-Hsien Kao ◽  
Sheng-Po Chang ◽  
Shoou-Jinn Chang
Keyword(s):  
Metal Gate ◽  
Random Telegraph Noise ◽  
High K ◽  
Telegraph Noise

Impact of Aluminum Ion Implantation on the Low Frequency Noise Characteristics of Hf-Based High-\(k\) /Metal Gate pMOSFETs

2014 ◽  
Vol 35 (9) ◽  
pp. 954-956 ◽  
Author(s):  
Tsung-Hsien Kao ◽  
Osbert Cheng ◽  
Shoou-Jinn Chang ◽  
San-Lein Wu ◽  
Chung-Yi Wu ◽  
...  
Keyword(s):  
Ion Implantation ◽  
Low Frequency ◽  
Frequency Noise ◽  
Low Frequency Noise ◽  
Metal Gate ◽  
Aluminum Ion ◽  
Noise Characteristics ◽  
High K

Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs

2010 ◽  
Author(s):  
W. K. Yeh ◽  
C. W. Hsu ◽  
Y. K. Fang ◽  
C. Y. Chen ◽  
C. T. Lin ◽  
...  
Keyword(s):  
Metal Gate ◽  
Random Telegraph Noise ◽  
High K ◽  
Telegraph Noise
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