Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs

Mapping Intimacies ◽

10.7567/ssdm.2010.p-3-14 ◽

2010 ◽

Author(s):

W. K. Yeh ◽

C. W. Hsu ◽

Y. K. Fang ◽

C. Y. Chen ◽

C. T. Lin ◽

...

Keyword(s):

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2018.2128 ◽

2018 ◽

Vol 13 (4) ◽

pp. 454-457

Author(s):

Tsung-Hsien Kao ◽

Sheng-Po Chang ◽

Shoou-Jinn Chang

Keyword(s):

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis

Applied Physics Letters ◽

10.1063/1.4893445 ◽

2014 ◽

Vol 105 (6) ◽

pp. 062109

Author(s):

Tsung-Hsien Kao ◽

Shoou-Jinn Chang ◽

Yean-Kuen Fang ◽

Po-Chin Huang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

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Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain

10.7567/ssdm.2013.ps-3-4 ◽

2013 ◽

Author(s):

S.C. Tsai ◽

S.L. Wu ◽

J.F. Chen ◽

K.S. Tsai ◽

T.H. Kao ◽

...

Keyword(s):

Random Telegraph Noise ◽

Noise Parameters ◽

High K ◽

Telegraph Noise ◽

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Study on interfacial trap location induced subthreshold slope degradation extracted by random telegraph noise for high-k/metal gate FinFET devices

Microelectronics Reliability ◽

10.1016/j.microrel.2020.113728 ◽

2020 ◽

Vol 111 ◽

pp. 113728

Author(s):

Yi-Lin Yang ◽

Wenqi Zhang ◽

Yu-Lin Chen ◽

Wen-Kuan Yeh

Keyword(s):

Subthreshold Slope ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

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Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/fnoise measurements

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.04ec14 ◽

2014 ◽

Vol 53 (4S) ◽

pp. 04EC14 ◽

Author(s):

Tsung-Hsien Kao ◽

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Yean-Kuen Fang ◽

Chien-Ming Lai ◽

...

Keyword(s):

Ion Implantation ◽

Random Telegraph Noise ◽

Aluminum Ion ◽

High K ◽

Telegraph Noise

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Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc22 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC22

Author(s):

Hsu Feng Chiu ◽

San Lein Wu ◽

Yee Shyi Chang ◽

Shoou Jinn Chang ◽

Po Chin Huang ◽

...

Keyword(s):

Field Effect Transistors ◽

Low Frequency ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Frequency Noise ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

Noise Characterization

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Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis

Applied Physics Express ◽

10.7567/apex.6.084201 ◽

2013 ◽

Vol 6 (8) ◽

pp. 084201

Author(s):

San-Lein Wu ◽

Kai-Shiang Tsai ◽

Osbert Cheng

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Noise Analysis ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise ◽

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Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements

10.7567/ssdm.2013.ps-3-5 ◽

2013 ◽

Author(s):

T.H. Kao ◽

S.L. Wu ◽

K.S. Tsai ◽

Y.K. Fang ◽

B.C. Wang ◽

...

Keyword(s):

Ion Implantation ◽

Random Telegraph Noise ◽

Aluminum Ion ◽

High K ◽

Telegraph Noise ◽

Noise Measurements

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Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise

Japanese Journal of Applied Physics ◽

10.7567/jjap.53.038005 ◽

2014 ◽

Vol 53 (3) ◽

pp. 038005

Author(s):

San-Lein Wu ◽

Hsu-Feng Chiu ◽

Yee-Shyi Chang ◽

Osbert Cheng

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy and Concentration Ion Implantation on Random Telegraph Noise

10.7567/ssdm.2015.ps-3-12 ◽

2015 ◽

Author(s):

T.H. Kao ◽

S.J. Chang ◽

Y.K. Fang ◽

P.C. Huang ◽

Y.K. Su ◽

...

Keyword(s):

Ion Implantation ◽

Random Telegraph Noise ◽

High K ◽

Telegraph Noise

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