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Study on interfacial trap location induced subthreshold slope degradation extracted by random telegraph noise for high-k/metal gate FinFET devices
Microelectronics Reliability
◽
10.1016/j.microrel.2020.113728
◽
2020
◽
Vol 111
◽
pp. 113728
Author(s):
Yi-Lin Yang
◽
Wenqi Zhang
◽
Yu-Lin Chen
◽
Wen-Kuan Yeh
Keyword(s):
Subthreshold Slope
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
◽
Trap Location
Download Full-text
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References
Impact of Trap Behavior on Random Telegraph Noise in High-k/Metal Gate pMOSFETs
Journal of Nanoelectronics and Optoelectronics
◽
10.1166/jno.2018.2128
◽
2018
◽
Vol 13
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◽
pp. 454-457
Author(s):
Tsung-Hsien Kao
◽
Sheng-Po Chang
◽
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Keyword(s):
Metal Gate
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Investigation of trap properties in high-k/metal gate p-type metal-oxide-semiconductor field-effect-transistors with aluminum ion implantation using random telegraph noise analysis
Applied Physics Letters
◽
10.1063/1.4893445
◽
2014
◽
Vol 105
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◽
pp. 062109
Author(s):
Tsung-Hsien Kao
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Shoou-Jinn Chang
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Yean-Kuen Fang
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Po-Chin Huang
◽
Chien-Ming Lai
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...
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Noise Analysis
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
◽
P Type
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Characterization the random telegraph noise in 32nm high-k/metal gate CMOSFETs
10.7567/ssdm.2010.p-3-14
◽
2010
◽
Author(s):
W. K. Yeh
◽
C. W. Hsu
◽
Y. K. Fang
◽
C. Y. Chen
◽
C. T. Lin
◽
...
Keyword(s):
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
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Correlation between 1/f Noise Parameters and Random Telegraph Noise in 28-nm High-k/Metal Gate pMOSFETs with Embedded SiGe Source/Drain
10.7567/ssdm.2013.ps-3-4
◽
2013
◽
Author(s):
S.C. Tsai
◽
S.L. Wu
◽
J.F. Chen
◽
K.S. Tsai
◽
T.H. Kao
◽
...
Keyword(s):
Metal Gate
◽
Random Telegraph Noise
◽
Noise Parameters
◽
High K
◽
Telegraph Noise
◽
28 Nm
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Trap properties of high-k/metal gate pMOSFETs with aluminum ion implantation by random telegraph noise and 1/fnoise measurements
Japanese Journal of Applied Physics
◽
10.7567/jjap.53.04ec14
◽
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◽
Vol 53
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◽
pp. 04EC14
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Author(s):
Tsung-Hsien Kao
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San-Lein Wu
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Kai-Shiang Tsai
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Yean-Kuen Fang
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Chien-Ming Lai
◽
...
Keyword(s):
Ion Implantation
◽
Metal Gate
◽
Random Telegraph Noise
◽
Aluminum Ion
◽
High K
◽
Telegraph Noise
Download Full-text
Effect of Annealing Process on Trap Properties in High-k/Metal Gate n-Channel Metal–Oxide–Semiconductor Field-Effect Transistors through Low-Frequency Noise and Random Telegraph Noise Characterization
Japanese Journal of Applied Physics
◽
10.7567/jjap.52.04cc22
◽
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◽
Vol 52
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Author(s):
Hsu Feng Chiu
◽
San Lein Wu
◽
Yee Shyi Chang
◽
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◽
Po Chin Huang
◽
...
Keyword(s):
Field Effect Transistors
◽
Low Frequency
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Frequency Noise
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
◽
Noise Characterization
Download Full-text
Investigation of Trap Properties in High-k/Metal Gate p-Type Metal–Oxide–Semiconductor Field-Effect Transistors with SiGe Source/Drain Using Random Telegraph Noise Analysis
Applied Physics Express
◽
10.7567/apex.6.084201
◽
2013
◽
Vol 6
(8)
◽
pp. 084201
Author(s):
San-Lein Wu
◽
Kai-Shiang Tsai
◽
Osbert Cheng
Keyword(s):
Field Effect
◽
Field Effect Transistors
◽
Noise Analysis
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
◽
P Type
Download Full-text
Study of Trap Properties of High-k/Metal Gate pMOSFETs with Aluminum Ion Implantation by Random Telegraph Noise and 1/f Noise Measurements
10.7567/ssdm.2013.ps-3-5
◽
2013
◽
Author(s):
T.H. Kao
◽
S.L. Wu
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K.S. Tsai
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◽
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Keyword(s):
Ion Implantation
◽
Metal Gate
◽
Random Telegraph Noise
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Aluminum Ion
◽
High K
◽
Telegraph Noise
◽
Noise Measurements
Download Full-text
Defect properties of high-k/metal-gate metal–oxide–semiconductor field-effect transistors determined by characterization of random telegraph noise
Japanese Journal of Applied Physics
◽
10.7567/jjap.53.038005
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2014
◽
Vol 53
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◽
pp. 038005
Author(s):
San-Lein Wu
◽
Hsu-Feng Chiu
◽
Yee-Shyi Chang
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Osbert Cheng
Keyword(s):
Metal Oxide
◽
Field Effect
◽
Field Effect Transistors
◽
Metal Oxide Semiconductor
◽
Oxide Semiconductor
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
Download Full-text
Investigation of Trap Properties in High-k/Metal Gate pMOSFETs of Higher Al Energy and Concentration Ion Implantation on Random Telegraph Noise
10.7567/ssdm.2015.ps-3-12
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◽
Author(s):
T.H. Kao
◽
S.J. Chang
◽
Y.K. Fang
◽
P.C. Huang
◽
Y.K. Su
◽
...
Keyword(s):
Ion Implantation
◽
Metal Gate
◽
Random Telegraph Noise
◽
High K
◽
Telegraph Noise
Download Full-text
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