High-temperature tensile testing machine for investigation of brittle–ductile transition behavior of single crystal silicon microstructure

2015 ◽  
Vol 54 (6S1) ◽  
pp. 06FP04 ◽  
Author(s):  
Akio Uesugi ◽  
Takahiro Yasutomi ◽  
Yoshikazu Hirai ◽  
Toshiyuki Tsuchiya ◽  
Osamu Tabata
Keyword(s):  
High Temperature ◽  
Single Crystal ◽  
Tensile Testing ◽  
Testing Machine ◽  
Single Crystal Silicon ◽  
Tensile Testing Machine ◽  
Crystal Silicon ◽  
Transition Behavior ◽  
Brittle Ductile Transition ◽  
High Temperature Tensile

Experimental Investigation on Brittle-Ductile Transition in Electroplated Diamond Wire Saw Machining Single Crystal Silicon

2010 ◽  
Vol 431-432 ◽  
pp. 265-268 ◽  
Author(s):  
Yu Fei Gao ◽  
Pei Qi Ge
Keyword(s):  
Single Crystal ◽  
Material Removal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Diamond Wire ◽  
Brittle Ductile Transition ◽  
Wire Saw ◽  
Diamond Wire Saw ◽  
R Value ◽  
Material Removal Mode

Based on reciprocating electroplated diamond wire saw (REDWS) slicing experiments, a study on REDWS machining brittle-ductile transition of single crystal silicon was introduced. The machined surfaces and chips were observed by using Scanning Electron Microscope (SEM), and some experimental evidences of the change of material removal mode had been obtained. The experimental results indicate there is a close relationship between material removal mode and the ratio r value of ingot feed speed and wire speed, through controlling and adjusting the r value, the material removal mode can be complete brittle, partial ductile and near-ductile removal.

scholarly journals A Constitutive Model for the Mechanical Behavior of Single Crystal Silicon at Elevated Temperature

2001 ◽  
Vol 687 ◽  
Author(s):  
H.-S. Moon ◽  
L. Anand ◽  
S. M. Spearing
Keyword(s):  
High Temperature ◽  
Constitutive Model ◽  
Single Crystal ◽  
Mechanical Behavior ◽  
Elevated Temperatures ◽  
Single Crystal Silicon ◽  
Operational Environment ◽  
Localized Deformation ◽  
Creep Tests ◽  
Crystal Silicon

AbstractSilicon in single crystal form has been the material of choice for the first demonstration of the MIT microengine project. However, because it has a relatively low melting temperature, silicon is not an ideal material for the intended operational environment of high temperature and stress. In addition, preliminary work indicates that single crystal silicon has a tendency to undergo localized deformation by slip band formation. Thus it is critical to obtain a better understanding of the mechanical behavior of this material at elevated temperatures in order to properly exploit its capabilities as a structural material. Creep tests in simple compression with n-type single crystal silicon, with low initial dislocation density, were conducted over a temperature range of 900 K to 1200 K and a stress range of 10 MPa to 120 MPa. The compression specimens were machined such that the multi-slip <100> or <111> orientations were coincident with the compression axis. The creep tests reveal that response can be delineated into two broad regimes: (a) in the first regime rapid dislocation multiplication is responsible for accelerating creep rates, and (b) in the second regime an increasing resistance to dislocation motion is responsible for the decelerating creep rates, as is typically observed for creep in metals. An isotropic elasto-viscoplastic constitutive model that accounts for these two mechanisms has been developed in support of the design of the high temperature turbine structure of the MIT microengine.

Fracture Toughness Measurement of a Micro-Sized Single Crystal Silicon

2005 ◽  
Vol 297-300 ◽  
pp. 292-298 ◽  
Author(s):  
Satoru Koyama ◽  
Kazuki Takashima ◽  
Yakichi Higo
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Ion Beam ◽  
Testing Machine ◽  
Single Crystal Silicon ◽  
Mems Devices ◽  
Type Specimens ◽  
Crystal Silicon ◽  
Fracture Toughness Measurement ◽  
Toughness Measurement

Reliability is one of the most critical issues for designing practical MEMS devices. In particular, the fracture toughness of micro-sized MEMS elements is important, as micro/nano-sized flaws can act as a crack initiation sites to cause failure of such devices. Existing MEMS devices commonly use single crystal silicon. Fracture toughness testing upon micro-sized single crystal silicon was therefore carried out to examine whether a fracture toughness measurement technique, based upon the ASTM standard, is applicable to 1/1000th sized silicon specimens. Notched cantilever beam type specimens were prepared by focused ion beam machining. Two specimens types with different notch orientations were prepared. The notch plane/direction were (100)/[010], and (110)/[ ＿ ,110], respectively. Fracture toughness tests were carried out using a mechanical testing machine for micro-sized specimens. Fracture has been seen to occur in a brittle manner in both orientations. The provisional fracture toughness values (KQ) are 1.05MPam1/2 and 0.96MPam1/2, respectively. These values meet the micro-yielding criteria for plane strain fracture toughness values (KIC). Fracture toughness values for the orientations tested are of the same order as values in the literature. The results obtained in this investigation indicate that the fracture toughness measurement method used is applicable for micro-sized components of single crystal silicon in MEMS devices.

T0302-2-6 In-situ TEM Experiment of Tensile Testing for Single-Crystal-Silicon Thin Film

2010 ◽  
Vol 2010.8 (0) ◽  
pp. 263-264
Author(s):  
Taeko ANDO ◽  
Hidekazu Ishihara ◽  
Masahiro Nakajima ◽  
Shigeo Arai ◽  
Toshio Fukuda ◽  
...  
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Tensile Testing ◽  
Single Crystal Silicon ◽  
In Situ Tem ◽  
Silicon Thin Film ◽  
Crystal Silicon
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