Material properties of pulsed-laser crystallized Si thin films grown on yttria-stabilized zirconia crystallization-induction layers by two-step irradiation method

2016 ◽  
Vol 55 (3S1) ◽  
pp. 03CB02
Author(s):  
Mai Thi Kieu Lien ◽  
Susumu Horita
Keyword(s):  
Thin Films ◽  
Material Properties ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Stabilized Zirconia

Crystallization and grain growth characteristics of yttria-stabilized zirconia thin films grown by pulsed laser deposition

2011 ◽  
Vol 191 (1) ◽  
pp. 12-23 ◽  
Author(s):  
Sebastian Heiroth ◽  
Ruggero Frison ◽  
Jennifer L.M. Rupp ◽  
Thomas Lippert ◽  
Eszter J. Barthazy Meier ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Grain Growth ◽  
Pulsed Laser ◽  
Growth Characteristics ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Stabilized Zirconia

High Electron Mobility W-doped In2O3 Thin Films

2005 ◽  
Vol 905 ◽  
Author(s):  
Paul F. Newhouse ◽  
Cheol-Hee Park ◽  
Douglas A. Keszler ◽  
Janet Tate ◽  
Peter S. Nyholm
Keyword(s):  
Thin Films ◽  
Electron Mobility ◽  
Room Temperature ◽  
Dopant Concentration ◽  
Pulsed Laser ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
High Electron ◽  
Stabilized Zirconia ◽  
High Electron Mobility

AbstractHigh electron mobility thin films of In2−xWxO3+d (0 ≤ × ≤ 0.075) were prepared by pulsed laser deposition. The highest mobility polycrystalline and textured films show mobility >110 cm2/Vs on both amorphous SiO2 and single crystal yttria-stabilized zirconia substrates. The carrier density is in the range 1−3 × 1020 cm−3 at room temperature. The W dopant concentration for films with optimized electrical properties was x ∼ 0.03.

Structural Properties of Yttria-stabilized Zirconia Thin Films Grown by Pulsed Laser Deposition

1999 ◽  
Vol 14 (4) ◽  
pp. 1329-1336 ◽  
Author(s):  
J. Y. Dai ◽  
H. C. Ong ◽  
R. P. H. Chang
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Oxygen Pressure ◽  
Pulsed Laser ◽  
Growth Direction ◽  
Yttria Stabilized Zirconia ◽  
Laser Deposition ◽  
Low Oxygen ◽  
Stabilized Zirconia

Yttria-stabilized zirconia (YSZ) thin films grown by the pulsed laser deposition method on (0001) sapphire substrates have been studied by x-ray diffraction (XRD), high-resolution transmission electron microscopy (HRTEM), and scanning electron microscopy (SEM). It was found that the crystal orientation of the YSZ films changes as a function of oxygen pressure during deposition. At low oxygen pressure (50 mTorr), well-defined (111) oriented YSZ films are grown. High oxygen pressure favors the nucleation of (001) oriented YSZ grains. A model to explain the preferred growth direction of (001) YSZ is presented. Utilizing the experimental data, we have developed a two-step process to epitaxially grow high-quality (001) oriented YSZ on (0001) sapphire substrate.

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