Improving the operational characteristic stability in Al/Au/ZnO/Al resistive random access memory devices

2016 ◽  
Vol 55 (4) ◽  
pp. 044101 ◽  
Author(s):  
Cheng-Yen Wu ◽  
Hsin-Chiang You ◽  
Gong-Kai Lin ◽  
Wen-Luh Yang
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Operational Characteristic ◽  
Access Memory

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)

2019 ◽  
Vol 5 (10) ◽  
pp. 1970054
Author(s):  
Stefan Petzold ◽  
Alexander Zintler ◽  
Robert Eilhardt ◽  
Eszter Piros ◽  
Nico Kaiser ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Resistive Switching ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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