Low-voltage operation of Si-based ferroelectric field effect transistors using organic ferroelectrics, poly(vinylidene fluoride–trifluoroethylene), as a gate dielectric

2016 ◽  
Vol 55 (4S) ◽  
pp. 04EE04 ◽  
Author(s):  
Yusuke Miyata ◽  
Takeshi Yoshimura ◽  
Atsushi Ashida ◽  
Norifumi Fujimura
Keyword(s):  
Field Effect ◽  
Gate Dielectric ◽  
Vinylidene Fluoride ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Low Voltage Operation ◽  
Organic Ferroelectrics ◽  
Poly Vinylidene Fluoride

Low-Voltage Organic Field-Effect Transistors (OFETs) with Solution-Processed Metal-Oxide as Gate Dielectric

2011 ◽  
Vol 3 (12) ◽  
pp. 4662-4667 ◽  
Author(s):  
Yaorong Su ◽  
Chengliang Wang ◽  
Weiguang Xie ◽  
Fangyan Xie ◽  
Jian Chen ◽  
...  
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Solution Processed

Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS2 and ultra high-k gate dielectric PZT

Nanoscale ◽  
2015 ◽  
Vol 7 (19) ◽  
pp. 8695-8700 ◽  
Author(s):  
Changjian Zhou ◽  
Xinsheng Wang ◽  
Salahuddin Raju ◽  
Ziyuan Lin ◽  
Daniel Villaroman ◽  
...  
Keyword(s):  
Low Power ◽  
Field Effect ◽  
Gate Dielectric ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Power Device ◽  
Enhancement Mode ◽  
High K ◽  
High K Gate Dielectric

Ultra high-k dielectric enables low-voltage enhancement-mode MoS2 transistor with high ON/OFF ratio, leading to low-power device.

Sign in / Sign up

Export Citation Format

Share Document