Effect of Ferroelectric Polarization on Carrier Transport in Controlled Polarization-Type Ferroelectric Gate Field-Effect Transistors with Poly(vinylidene fluoride–tetrafluoroethylene)/ZnO Heterostructure

2012 ◽  
Vol 51 ◽  
pp. 11PB01
Author(s):  
Hiroaki Yamada ◽  
Takeshi Yoshimura ◽  
Norifumi Fujimura
Keyword(s):  
Field Effect ◽  
Carrier Transport ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Ferroelectric Polarization ◽  
Poly Vinylidene Fluoride

Polarization-Induced Transport: A Comparative Study of Ferroelectric and Non-Ferroelectric Dielectric-Gated Organic Field-Effect Transistors

MRS Advances ◽  
2017 ◽  
Vol 2 (51) ◽  
pp. 2951-2956 ◽  
Author(s):  
Amrit Laudari ◽  
Shubhra Gangopadhyay ◽  
Suchismita Guha
Keyword(s):  
Dielectric Constant ◽  
Comparative Study ◽  
Field Effect ◽  
Carrier Transport ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Negative Temperature ◽  
Trap States ◽  
Organic Field Effect Transistors ◽  
Poly Vinylidene Fluoride

ABSTRACTA comparative study of ferroelectric and non-ferroelectric-gated organic field-effect transistors (FETs) have been carried out by using a small molecule semiconductor 6,13 bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) to understand the fundamental aspects of carrier transport in FET architectures. Temperature-dependent current-voltage characteristics from non-ferroelectric dielectric-gated FETs show a clear activated transport, independent of the dielectric constant. While using the ferroelectric dielectric polymer poly(vinylidene fluoride-trifluoroethylene) (PVDF-TrFE), where the dielectric constant may be tuned by changing the temperature, a negative temperature coefficient of the carrier mobility is observed beyond 200 K. The polarization fluctuation dominant transport inherent to a ferroelectric dielectric in conjunction with the discrete nature of traps in TIPS-pentacene results in an effective de-trapping of the shallow trap states into more mobile states.

Transfer printing of poly(vinylidene fluoride-trifluoroethylene) films for low-voltage ferroelectric field-effect transistors

2015 ◽  
Vol 66 (6) ◽  
pp. 1013-1019
Author(s):  
Won-Ho Kim ◽  
Ji-Hoon Jung ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park ◽  
Sungkeun Baang
Keyword(s):  
Field Effect ◽  
Vinylidene Fluoride ◽  
Low Voltage ◽  
Field Effect Transistors ◽  
Transfer Printing ◽  
Poly Vinylidene Fluoride

Interface screening and imprint in poly(vinylidene fluoride/trifluoroethylene) ferroelectric field effect transistors

2009 ◽  
Vol 105 (5) ◽  
pp. 054110 ◽  
Author(s):  
I. Lazareva ◽  
Y. Koval ◽  
P. Müller ◽  
K. Müller ◽  
K. Henkel ◽  
...  
Keyword(s):  
Field Effect ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Poly Vinylidene Fluoride

scholarly journals Solvent-Dependent Electrical Characteristics and Mechanical Stability of Flexible Organic Ferroelectric Field-Effect Transistors

Micromachines ◽  
2019 ◽  
Vol 10 (11) ◽  
pp. 727
Author(s):  
Do-Kyung Kim ◽  
Hyeonju Lee ◽  
Xue Zhang ◽  
Jin-Hyuk Bae ◽  
Jaehoon Park
Keyword(s):  
Electrical Properties ◽  
Flexible Electronics ◽  
Field Effect ◽  
Vinylidene Fluoride ◽  
Mechanical Stability ◽  
Field Effect Transistors ◽  
Electrical Characteristics ◽  
Next Generation ◽  
Poly Vinylidene Fluoride ◽  
Memory Applications

Flexible organic ferroelectric field-effect transistors (Fe-FETs) have attracted attention for next-generation memory applications. A fundamental understanding of the electrical properties and mechanical stability of transistors is a prerequisite to realizing practical flexible electronics. Here, we demonstrate the solvent-dependent electrical characteristics and mechanical stability of flexible Fe-FETs. Poly(vinylidene fluoride-trifluoro-ethylene) (P(VDF-TrFE)) based Fe-FETs were fabricated by using dimethylformamide (DMF) and methyl ethyl ketone (MEK) solvents on a polyimide substrate. P(VDF-TrFE) from DMF formed a smoother surface than a surface from MEK; the surface property greatly affected the electrical properties and mechanical stability of the devices. Larger hysteresis and higher mobility were obtained from Fe-FET using DMF compared to those characteristics from using MEK. Furthermore, Fe-FET using DMF showed lower degradation of on-current and mobility under repetitive mechanical stress than an MEK-based Fe-FET, due to its excellent semiconductor-insulator interface. These results will guide appropriate solvent selection and contribute to the improvement of flexible Fe-FET electrical properties and mechanical stability in the next generation of memory devices.

Semiconducting Arylacetylene:Insulating Polymer Blends for Organic-Based Electronic Devices

2012 ◽  
Vol 1402 ◽  
Author(s):  
Pascal Wolfer ◽  
Maria Laura Santarelli ◽  
Luigi Vaccaro ◽  
Alessandra Broggi ◽  
Daniela Lanari ◽  
...  
Keyword(s):  
Polymer Blends ◽  
High Density Polyethylene ◽  
Field Effect ◽  
Vinylidene Fluoride ◽  
Field Effect Transistors ◽  
Electronic Devices ◽  
High Density ◽  
Poly Vinylidene Fluoride

ABSTRACTIn this contribution we have reported about bi-component blends of readily accessible semiconducting molecular arylacetylenes with insulating high-density polyethylene (HDPE) and poly(vinylidene fluoride) (PVDF) that may exhibit electronic characteristics comparable to those of the neat semiconductors, as measured in field-effect transistors (FETs).

Sign in / Sign up

Export Citation Format

Share Document