Microspectroscopic imaging of solution plasma: How do its physical properties and chemical species evolve in atmospheric-pressure water vapor bubbles?

2017 ◽  
Vol 57 (1) ◽  
pp. 0102A1 ◽  
Author(s):  
Hiroharu Yui ◽  
Motohiro Banno
Keyword(s):  
Water Vapor ◽  
Physical Properties ◽  
Atmospheric Pressure ◽  
Chemical Species ◽  
Vapor Bubbles ◽  
Pressure Water

Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation

2011 ◽  
Vol 50 (8) ◽  
pp. 08JG05 ◽  
Author(s):  
Hui Deng ◽  
Tatsuya Takiguchi ◽  
Masaki Ueda ◽  
Azusa N. Hattori ◽  
Nobuyuki Zettsu ◽  
...  
Keyword(s):  
Water Vapor ◽  
Atmospheric Pressure ◽  
Plasma Oxidation ◽  
Pressure Water

Damage-Free Dry Polishing of 4H-SiC Combined with Atmospheric-Pressure Water Vapor Plasma Oxidation

2011 ◽  
Vol 50 (8S1) ◽  
pp. 08JG05 ◽  
Author(s):  
Hui Deng ◽  
Tatsuya Takiguchi ◽  
Masaki Ueda ◽  
Azusa N. Hattori ◽  
Nobuyuki Zettsu ◽  
...  
Keyword(s):  
Water Vapor ◽  
Atmospheric Pressure ◽  
Plasma Oxidation ◽  
Pressure Water

XTEM Observation of 4H-SiC (0001) Surfaces Processed by Plasma Assisted Polishing

2012 ◽  
Vol 497 ◽  
pp. 156-159
Author(s):  
Hui Deng ◽  
Kazuya Yamamura
Keyword(s):  
Water Vapor ◽  
Oxide Layer ◽  
Atmospheric Pressure ◽  
Oxidation Potential ◽  
Cross Sectional ◽  
Plasma Irradiation ◽  
Transmission Electron ◽  
Surface Damages ◽  
Pressure Water ◽  
20 Nm

We proposed a novel polishing technique named plasma assisted polishing (PAP) which combined atmospheric pressure water vapor plasma irradiation and soft abrasive polishing. Plasma irradiation oxidized the surface of workpiece and made it easier to be polished. PAP was applied to 4H-SiC, and an automatic flat surface without any scratches was obtained. In this study, we observed the processed surfaces using cross-sectional transmission electron microscopy (XTEM). The XTEM images showed us that an oxide layer with a thickness of about 20 nm was generated after plasma irradiation for 1 h, which proved the strong oxidation potential of OH radical in water vapor plasma. The surfaces processed by PAP were next observed, oxide layer was completely removed and no surface damages were introduced as the crystal structure of 4H-SiC was clearly observed and well ordered.

Atmospheric pressure water-vapor plasma in an air-shielded environment by water flow

2018 ◽  
Vol 58 (SA) ◽  
pp. SAAC05 ◽  
Author(s):  
Hikaru Senba ◽  
Haruka Suzuki ◽  
Hirotaka Toyoda
Keyword(s):  
Water Vapor ◽  
Water Flow ◽  
Atmospheric Pressure ◽  
Pressure Water

scholarly journals Effect of hot calendering on physical properties and water vapor transfer resistance of bacterial cellulose films

2016 ◽  
Vol 51 (21) ◽  
pp. 9562-9572 ◽  
Author(s):  
V. L. D. Costa ◽  
A. P. Costa ◽  
M. E. Amaral ◽  
C. Oliveira ◽  
M. Gama ◽  
...  
Keyword(s):  
Water Vapor ◽  
Physical Properties ◽  
Bacterial Cellulose ◽  
Transfer Resistance ◽  
Cellulose Films ◽  
Vapor Transfer ◽  
Water Vapor Transfer
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