Si/Si1-xGex Selective Epitaxial Growth by Ultra High Vacuum Chemical Vapor Deposition Using Si2H6, GeH4

1991 ◽  
Author(s):  
Ken-ichi Aketagawa ◽  
Toru Tatsumi ◽  
Masayuki Hiroi ◽  
Taeko Niino ◽  
Junro Sakai
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Selective Epitaxial Growth

Silicon Nucleation on Silicon Dioxide and Selective Epitaxy In An Ultra-High Vacuum Raptid Thermal Chemical Vapor Deposition Reactor Using Disilane In Hydrogen

1993 ◽  
Vol 334 ◽  
Author(s):  
Katherine E. Violette ◽  
Mahesh K. Sanganeria ◽  
Mehmet C. Öztürk ◽  
Gari Harris ◽  
Dennis M. Maher
Keyword(s):  
Electron Microscopy ◽  
Chemical Vapor Deposition ◽  
Silicon Dioxide ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Strong Dependence ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Thermal Chemical Vapor Deposition

AbstractSilicon nucleation on silicon dioxide and selective silicon epitaxial growth (SEG) were studied in an ultra high vacuum rapid thermal chemical vapor deposition (UHV-RTCVD) reactor. Experiments were performed using 10% Si2H6 in H2 in a pressure range of 10 - 100 mTorr at 760°C. Under these conditions, the growth rate ranged from 75 to 330 nm/minute. Loss of selectivity via Si island formation on SiO2 was studied using scanning electron microscopy (SEM) and atomic force microscopy (AFM) revealing a strong dependence on deposition pressure. Cross sectional transmission electron microscopy (XTEM) was employed to study the vertical oxide/epitaxy interface where faceting can occur. The incubation time for nucleation was found to increase from 10s to 70s as pressure is reduced from 100 mTorr to 10 mTorr, allowing thicker selective epitaxial film growth in spite of the reduced growth rates. This was attributed to the reduction in gas phase supersaturation of the Si containing species resulting in a lower density of adsorbed atoms on the SiO2 surface. This process shows a potential for chlorine free selective epitaxial growth and provides insight to the surface morphology of polycrystalline films deposited at low pressures.

Selective epitaxial growth of Ge 1−x Sn x on Si by using metal-organic chemical vapor deposition

2017 ◽  
Vol 468 ◽  
pp. 614-619 ◽  
Author(s):  
Tomoya Washizu ◽  
Shinichi Ike ◽  
Yuki Inuzuka ◽  
Wakana Takeuchi ◽  
Osamu Nakatsuka ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Epitaxial Growth ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Epitaxial Growth ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Ultra-high vacuum chemical vapor deposition and in situ characterization of titanium oxide thin films

1991 ◽  
Vol 6 (9) ◽  
pp. 1913-1918 ◽  
Author(s):  
Jiong-Ping Lu ◽  
Rishi Raj
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Titanium Oxide ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Titanium Isopropoxide ◽  
Ultra High Vacuum

Chemical vapor deposition (CVD) of titanium oxide films has been performed for the first time under ultra-high vacuum (UHV) conditions. The films were deposited through the pyrolysis reaction of titanium isopropoxide, Ti(OPri)4, and in situ characterized by x-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES). A small amount of C incorporation was observed during the initial stages of deposition, through the interaction of precursor molecules with the bare Si substrate. Subsequent deposition produces pure and stoichiometric TiO2 films. Si–O bond formation was detected in the film-substrate interface. Deposition rate was found to increase with the substrate temperature. Ultra-high vacuum chemical vapor deposition (UHV-CVD) is especially useful to study the initial stages of the CVD processes, to prepare ultra-thin films, and to investigate the composition of deposited films without the interference from ambient impurities.

Homoepitaxy of Ge on ozone-treated Ge (1 0 0) substrate by ultra-high vacuum chemical vapor deposition

2019 ◽  
Vol 507 ◽  
pp. 113-117 ◽  
Author(s):  
Jiaqi Wang ◽  
Limeng Shen ◽  
Guangyang Lin ◽  
Jianyuan Wang ◽  
Jianfang Xu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum

Water Desorption from Magnesium Oxide Films Fabricated by Chemical Vapor Deposition

2006 ◽  
Vol 11-12 ◽  
pp. 693-696 ◽  
Author(s):  
S. Kawaguchi ◽  
K.C. Namiki ◽  
S. Ohshio ◽  
Junichi Nishino ◽  
H. Saitoh
Keyword(s):  
Chemical Vapor Deposition ◽  
Magnesium Oxide ◽  
Vapor Deposition ◽  
High Vacuum ◽  
Secondary Electron Emission ◽  
Film Surface ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Water Desorption ◽  
Plasma Sputtering

Magnesium oxide (MgO) films are utilized for the anti-plasma sputtering coating with excellent ability of secondary electron emission in plasma display panels (PDP). These properties are degraded by the impurities adsorbed on the film surface. Therefore, we should obtain impurity-free surface during the PDP manufacturing process. We have synthesized whisker and continuous film types of metal oxide using a chemical vapor deposition (CVD) method operated under atmosphere. In this study, a temperature programmed desorption method has been applied to detect residual species adsorbed on the surface of the present films in the ultra-high vacuum atmosphere. The amount of water adsorption was determined by this method.

scholarly journals Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

2007 ◽  
Vol 2 (3) ◽  
pp. 149-154
Author(s):  
Rui Wang ◽  
Soon Fatt Yoon ◽  
Fen Lu ◽  
Wei Jun Fan ◽  
Chong Yang Liu ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Quantum Wells ◽  
Vapor Deposition ◽  
Coupling Effect ◽  
High Vacuum ◽  
Chemical Vapor ◽  
Ultra High Vacuum ◽  
Sige Quantum Wells
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