Combined Effects of an Epitaxial Ge Channel and Si Substrate on Ge-on-Si MOS Capacitors and Field Effect Transistors

2007 ◽  
Author(s):  
Jungwoo Oh ◽  
Prashant Majhi ◽  
Hideok Lee ◽  
Se-Hoon Lee ◽  
Sanjay Banerjee ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Combined Effects ◽  
Si Substrate ◽  
Mos Capacitors

FABRICATION AND PROPERTIES OF La0.8Ca0.2MnO3 FIELD EFFECT TRANSISTORS

2007 ◽  
Vol 14 (04) ◽  
pp. 745-749
Author(s):  
WANG LI FENG ◽  
ZHANG WEI WEI ◽  
ZHOU YU QING ◽  
ZHU MING
Keyword(s):  
Field Effect ◽  
Colossal Magnetoresistance ◽  
Field Effect Transistors ◽  
Sudden Increase ◽  
Gate Bias ◽  
Si Substrate ◽  
First Order ◽  
Type Semiconductor ◽  
Different Temperatures ◽  
P Type

The inverted-gate colossal magnetoresistance-field-effect-transistors (CMR-FETs) were designed and successfully fabricated on the Si substrate by using semiconductor techniques. The studies on the capacitance properties were carried out under different temperatures, different frequencies, and different gate biases. The results indicate that La 0.8 Ca 0.2 MnO 3 is the typical p-type semiconductor. It was shown that the capacitance increases with the increasing of the temperature under certain gate bias. The sudden increase of the capacitance at 160 K was observed and needeed to be studied further. Meanwhile the capacitance decreased as the frequency increased with first order exponential decay fitting.

Impact of Epi-Layer Quality on Reliability of GaN/AlGaN/GaN Heterostructure Field-Effect Transistors on Si Substrate

2013 ◽  
Vol 60 (12) ◽  
pp. 4125-4132 ◽  
Author(s):  
Yuji Ando ◽  
Kohji Ishikura ◽  
Yasuhiro Murase ◽  
Kazunori Asano ◽  
Isao Takenaka ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Si Substrate ◽  
Heterostructure Field Effect Transistors ◽  
Gan Heterostructure

scholarly journals Temperature-stable black phosphorus field-effect transistors through effective phonon scattering suppression on atomic layer deposited aluminum nitride

Nanophotonics ◽  
2020 ◽  
Vol 9 (7) ◽  
pp. 2053-2062
Author(s):  
Wenjun Liu ◽  
Hemei Zheng ◽  
Kahwee Ang ◽  
Hao Zhang ◽  
Huan Liu ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Noise Analysis ◽  
Atomic Layer ◽  
Black Phosphorus ◽  
Electrical Performance ◽  
Frequency Noise ◽  
Si Substrate ◽  
Aln Film ◽  
Stable Performance

AbstractBlack phosphorus (BP) shows great potential in electronic and optoelectronic applications; however, maintaining the stable performance of BP devices over temperature is still challenging. Here, a novel BP field-effect transistor (FET) fabricated on the atomic layer deposited AlN/SiO2/Si substrate is demonstrated. Electrical measurement results show that BP FETs on the AlN substrate possess superior electrical performance compared with those fabricated on the conventional SiO2/Si substrate. It exhibits a large on-off current ratio of 5 × 108, a low subthreshold swing of <0.26 V/dec, and a high normalized field-effect carrier mobility of 1071 cm2 V−1 s−1 in the temperature range from 77 to 400 K. However, these stable electrical performances are not found in the BP FETs on SiO2/Si substrate when the temperature increases up to 400 K; instead, the electrical performance of BP FETs on the SiO2/Si substrate degrades drastically. Furthermore, to gain a physical understanding on the stable performance of BP FETs on the AlN substrate, low-frequency noise analysis was performed, and it revealed that the AlN film plays a significant role in suppressing the lattice scattering and charge trapping effects at high temperatures.

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