Excellent Ambipolar Characteristics on Schottky Barrier Thin-Film Transistors with Excimer Laser Annealing Treatment

Mapping Intimacies ◽

10.7567/ssdm.2002.p2-12 ◽

2002 ◽

Author(s):

Kuan-Lin Yeh ◽

Horng-Chih Lin ◽

Ren-Wei Tsai ◽

Ming-Hseng Lee ◽

Tiao-Yuan Huang

Keyword(s):

Thin Film ◽

Schottky Barrier ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Annealing Treatment ◽

Excimer Laser Annealing

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Fabrication of n- and p-Channel Schottky Barrier Thin-Film Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Methods

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c151 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C151

Author(s):

Jin-Wook Shin ◽

Chel-Jong Choi ◽

Moongyu Jang ◽

Won-Ju Cho

Keyword(s):

Thin Film ◽

Schottky Barrier ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Solid Phase ◽

Excimer Laser Annealing ◽

Solid Phase Crystallization

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Fabrication of N-type and P-type Schottky Barrier Thin-Film-Transistors Crystallized by Excimer Laser Annealing and Solid Phase Crystallization Method

10.7567/ssdm.2008.h-1-2 ◽

2008 ◽

Author(s):

J. W. Shin ◽

C. J. Choi ◽

W. J. Cho

Keyword(s):

Thin Film ◽

Schottky Barrier ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Solid Phase ◽

Excimer Laser Annealing ◽

Solid Phase Crystallization ◽

Crystallization Method ◽

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Application of Excimer-Laser Annealing to Amorphous, Poly-Crystal and Single-Crystal Silicon Thin-Film Transistors

phys stat sol (a) ◽

10.1002/(sici)1521-396x(199804)166:2<715::aid-pssa715>3.0.co;2-l ◽

1998 ◽

Vol 166 (2) ◽

pp. 715-728 ◽

Author(s):

M. Matsumura

Keyword(s):

Thin Film ◽

Single Crystal ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Single Crystal Silicon ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

Crystal Silicon

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On-Chip Bottom-Gate Polysilicon and Amorphous Silicon Thin-Film Transistors Using Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.29.l1775 ◽

1990 ◽

Vol 29 (Part 2, No. 10) ◽

pp. L1775-L1777 ◽

Author(s):

Kazuhiro Shimizu ◽

Osamu Sugiura ◽

Masakiyo Matsumura

Keyword(s):

Thin Film ◽

Amorphous Silicon ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

On Chip ◽

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Performance of Poly-Si Thin Film Transistors Fabricated by Excimer-Laser Annealing of SiH4- and Si2H6- Source Low Pressure Vapor Deposited a-Si Films with or without Solid-Phase Crystallization

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.37-38.565 ◽

1994 ◽

Vol 37-38 ◽

pp. 565-570 ◽

Author(s):

M. Fuse ◽

I. Asai ◽

M. Hirota ◽

Yoshinari Miyamoto

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Solid Phase ◽

Low Pressure ◽

Excimer Laser Annealing ◽

Solid Phase Crystallization ◽

Si Films ◽

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Application of Ion Doping and Excimer Laser Annealing to Fabrication of Low-Temperature Polycrystalline Si Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.2092 ◽

1994 ◽

Vol 33 (Part 1, No. 4A) ◽

pp. 2092-2099 ◽

Author(s):

Genshiro Kawachi ◽

Takashi Aoyama ◽

Akio Mimura ◽

Nobutake Konishi

Keyword(s):

Thin Film ◽

Low Temperature ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

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Poly-Silicon Thin-Film Transistors with Uniform Performance Fabricated by Excimer Laser Annealing

Japanese Journal of Applied Physics ◽

10.1143/jjap.32.474 ◽

1993 ◽

Vol 32 (Part 1, No. 1B) ◽

pp. 474-481 ◽

Author(s):

Ichirou Asai ◽

Noriji Kato ◽

Mario Fuse ◽

Toshihisa Hamano

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Silicon Thin Film ◽

Excimer Laser Annealing ◽

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Effects of Thermal Annealing on ZnO Thin-Film Transistor Characteristics and the Application of Excimer Laser Annealing in Plastic-Based ZnO Thin-Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.081608 ◽

2009 ◽

Vol 48 (8) ◽

pp. 081608 ◽

Author(s):

Mitsuru Nakata ◽

Kazushige Takechi ◽

Toshimasa Eguchi ◽

Eisuke Tokumitsu ◽

Hirotaka Yamaguchi ◽

...

Keyword(s):

Thin Film ◽

Thermal Annealing ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Thin Film Transistor ◽

Zno Thin Film ◽

Excimer Laser Annealing

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Comprehensive Study of Lateral Grain Growth in Poly-Si Films by Excimer Laser Annealing and Its Application to Thin Film Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.33.5657 ◽

1994 ◽

Vol 33 (Part 1, No. 10) ◽

pp. 5657-5662 ◽

Author(s):

Hiroyuki Kuriyama ◽

Tomoyuki Nohda ◽

Yoichirou Aya ◽

Takashi Kuwahara ◽

Kenichiro Wakisaka ◽

...

Keyword(s):

Thin Film ◽

Grain Growth ◽

Excimer Laser ◽

Thin Film Transistors ◽

Laser Annealing ◽

Excimer Laser Annealing ◽

Si Films ◽

Comprehensive Study

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Bottom-Gate Thin-Film Transistors Fabricated by Excimer Laser Annealing

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.811.177 ◽

2013 ◽

Vol 811 ◽

pp. 177-180

Author(s):

Jyh Liang Wang ◽

Chun Chien Tsai ◽

Chuan Chou Hwang ◽

Tsang Yen Hsieh

Keyword(s):

Thin Film ◽

Excimer Laser ◽

Thin Film Transistors ◽

High Performance ◽

Laser Annealing ◽

Electrical Characteristics ◽

Laser Crystallization ◽

Excimer Laser Annealing ◽

Excimer Laser Crystallization ◽

High performance and device uniformity n-channel low-temperature poly-silicon (LTPS) bottom-gate (BG) thin film transistors (TFTs) with artificially-controlled lateral grain growth have been performed by excimer laser crystallization (ELC). The BG TFTs (W/L = 1.5 μm/1.5 μm) demonstrate field-effect-mobility of 323 cm2/Vs and high Ion/Ioff of 9.5 × 108. The proposed BG TFTs reveal the superior electrical characteristics, device uniformity, and reliability than conventional top-gate ones.

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