In0.49GaP/Al0.45GaAs/In0.22GaAs/Al0.22GaAs Barrier Enhancement-mode Pseudomorphic High Electron Mobility Transistor with an Enhanced Gate Forward Turn-on Voltage
Keyword(s):
Turn On
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2010 ◽
Vol 54
(11)
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pp. 1291-1294
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2006 ◽
Vol 45
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pp. 3355-3357
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2006 ◽
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pp. 318-320
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2015 ◽
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2018 ◽
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