A Charge Storage Based Enhancement Mode AlGaN/GaN High Electron Mobility Transistor

2018 ◽  
Vol 913 ◽  
pp. 870-875 ◽  
Author(s):  
Hui Wang ◽  
Ling Li Jiang ◽  
Ning Wang ◽  
Hong Yu Yu ◽  
Xin Peng Lin
Keyword(s):  
Electron Mobility ◽  
Gate Dielectric ◽  
High Electron Mobility Transistor ◽  
Charge Storage ◽  
High Electron ◽  
High Electron Mobility ◽  
Charge Trap ◽  
Enhancement Mode ◽  
A Charge ◽  
The Impact

In this work, a charge storage based enhancement mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT) is proposed and studied. A stacked gate dielectrics, consisting of a tunnel oxide, a charge trap layer and a blocking oxide are applied in the HEMT structure. The E-mode can be realized by negative charge storage within the charge trap layer during the programming process. The impact of the programming condition and the thickness of the dielectrics on the threshold voltage (Vth) are simulated systematically. It is found that the Vth increases with the increasing programming voltage and time due to the increase of the storage charge. Under proper programming condition, the Vth can be increased to more than 2 V. Moreover, It is also found that the Vth increases with the decrease of the thickness of the dielectrics. In addition, it is found that the breakdown voltage of such HEMT can be adjusted by varying the gate dielectric stacks.

Double δ-Doped Enhancement-Mode InGaP/AlGaAs/InGaAs Pseudomorphic High Electron Mobility Transistor for Linearity Application

2006 ◽  
Vol 45 (No. 35) ◽  
pp. L932-L934 ◽  
Author(s):  
Li-Hsin Chu ◽  
Heng-Tung Hsu ◽  
Edward-Yi Chang ◽  
Tser-Lung Lee ◽  
Sze-Hung Chen ◽  
...  
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Enhancement Mode

The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor

2019 ◽  
Vol 33 (18) ◽  
pp. 1950190
Author(s):  
Hai Li Wang ◽  
Peng Yang ◽  
Kun Xu ◽  
Xiang Yang Duan ◽  
Shu Xiang Sun
Keyword(s):  
Mole Fraction ◽  
Electron Mobility ◽  
Transport Model ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
Conduction Band Offset ◽  
Electron Mobility Transistors ◽  
The Impact

In this paper, we investigated the impact of thickness and mole fraction AlInGaN back barrier on the DC performance of AlGaN/GaN high electron mobility transistors (HEMTs) by numerical simulation. The simulations are performed using the hydrodynamic transport model (HD). The simulation results indicated that an inserted AlInGaN back barrier with increasing thickness and mole fraction could effectively confine the electron in the channel, resulting in a significant improvement of the channel current and transconductance. Additionally, the variation of conduction band offset and the increase of total number electron in the channel led to the threshold voltage moving toward a more negative value.

Applications of GaN-Based High Electron Mobility Transistors in Large-Size Devices

2015 ◽  
Vol 764-765 ◽  
pp. 486-490
Author(s):  
Chih Hao Wang ◽  
Liang Yu Su ◽  
Finella Lee ◽  
Jian Jang Huang
Keyword(s):  
Electron Mobility ◽  
High Electron Mobility Transistors ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
Saturation Current ◽  
High Electron Mobility ◽  
Enhancement Mode ◽  
Electron Mobility Transistors ◽  
Large Size ◽  
Novel Design

We demonstrate a novel design of large-size device in AlGaN/GaN high-electron-mobility transistor (HEMT). Depletion mode (D-mode) HEMTs and enhancement mode (E-mode) HEMTs are fabricated in our research. The saturation current of D-mode HEMTs is over 6A. By using Cascode structure, the D-mode HEMT becomes a normally-off device efficiently, and the threshold voltage of it rises from-7V to 2V. By using BCB (Benzocyclobutene) as the passivation, the E-mode HEMT shows an excellent characteristic. Also, when the VGS of the E-mode HEMT is over 9V, it still shows a good performance.

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