High Quality Aluminum Oxide Passivation Layer for Crystalline Silicon Solar Cells Deposited by Parallel-Plate Plasma-Enhanced Chemical Vapor Deposition

2009 ◽  
Vol 3 (1) ◽  
pp. 012301 ◽  
Author(s):  
Shinsuke Miyajima ◽  
Junpei Irikawa ◽  
Akira Yamada ◽  
Makoto Konagai
Keyword(s):  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Aluminum Oxide ◽  
Vapor Deposition ◽  
Parallel Plate ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
High Quality ◽  
Crystalline Silicon Solar Cells

Mist chemical vapor deposition of aluminum oxide thin films for rear surface passivation of crystalline silicon solar cells

2014 ◽  
Vol 7 (2) ◽  
pp. 021303 ◽  
Author(s):  
Takayuki Uchida ◽  
Toshiyuki Kawaharamura ◽  
Kenji Shibayama ◽  
Takahiro Hiramatsu ◽  
Hiroyuki Orita ◽  
...  
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Aluminum Oxide ◽  
Vapor Deposition ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Rear Surface ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells

ALD Aluminum Oxide as a Hole Selective Tunneling Contact for Crystalline Silicon Solar Cells

2017 ◽  
Author(s):  
Kortan Ogutman ◽  
Kristopher O. Davis ◽  
Winston V. Schoenfeld ◽  
Michael Haslinger ◽  
Sofie Robert ◽  
...  
Keyword(s):  
Solar Cells ◽  
Aluminum Oxide ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Tunneling Contact

Hydrogen Treatment of Undoped Zno Thin Film Using Photo-Chemical Vapor Deposition

1996 ◽  
Vol 426 ◽  
Author(s):  
Seung Jae Baik ◽  
Jinsoo Song ◽  
Koeng Su Lim
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Chemical Vapor Deposition ◽  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Silicon Solar Cells ◽  
Hydrogen Treatment ◽  
Zno Thin Film ◽  
Hydrogen Molecules

AbstractTo obtain high quality ZnO thin films for use as transparent electrodes of amorphous silicon solar cells, hydrogen treatment of the films using photo-chemical vapor deposition was performed for the first time. The as-deposited ZnO thin film was irradiated by UV light during the flow of hydrogen molecules in the presence of photo-sensitizers of mercury. As the treatment time increased, resistivity decreased from 1 × 10−2Ωcm to 2 × 10−3Ωcm. Moreover, haze ratio increased from 20% to 48%. Hydrogen radicals were thought to be playing various roles on the neighborhood of the surface region and the grain boundary region. This new trial gave us new understanding into the relation between hydrogen and ZnO. Moreover, these results could be applied to the process of amorphous silicon solar cells and a possible increase of efficiency is expected.

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