Characterization of SiGe Thin Films Deposited by RF Magnetron Sputtering for Infrared Imaging Sensor

2010 ◽  
Author(s):  
K. Yamaki ◽  
S. Sekino ◽  
T. Tai ◽  
S. Nakamura ◽  
T. Yoshitake ◽  
...  
2010 ◽  
Vol 1245 ◽  
Author(s):  
Reza Anvari ◽  
Qi Cheng ◽  
Muhammad Lutful Hai ◽  
Truc Phan Bui ◽  
A. J. Syllaios ◽  
...  

AbstractThis paper presents the formation and the characterization of silicon germanium oxide (SixGeyO1-x-y) infrared sensitive material for uncooled microbolometers. RF magnetron sputtering was used to simultaneously deposit Si and Ge thin films in an Ar/O2 environment at room temperature. The effects of varying Si and O composition on the thin film's electrical properties which include temperature coefficient of resistance (TCR) and resistivity were investigated. The highest achieved TCR and the corresponding resistivity at room temperature were -5.41 %/K and 3.16×103 ohm cm using Si0.039Ge0.875O0.086 for films deposited at room temperature.


Author(s):  
Thyago Santos Braga ◽  
Marcos Massi ◽  
Argemiro Soares Silva Sobrinho ◽  
Fabio Dondeo Origo ◽  
Choyu Otani

1994 ◽  
Vol 178 ◽  
pp. 233-237 ◽  
Author(s):  
Tokuro Nanba ◽  
Tadashi Takahashi ◽  
Jun Takada ◽  
Akiyoshi Osaka ◽  
Yoshinari Miura ◽  
...  

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