Effects of the Interface-related and Bulk-fixed Charges in Ge/GeO2 Stack on Band Bending of Ge Studied by X-ray Photoemission Spectroscopy

2013 ◽  
Author(s):  
W.F. Zhang ◽  
C.H. Lee ◽  
C.M. Lu ◽  
T. Nishimura ◽  
K. Nagashio ◽  
...  
Keyword(s):  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray ◽  
Fixed Charges

Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
W. G. Petro ◽  
T. Kendelewicz ◽  
I. A. Babalola ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Valence Band Maximum ◽  
Interfacial Reactions ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Deconvolution Technique ◽  
P Type ◽  
Measurable Change

ABSTRACTRoom-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.

New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Photoemission Spectroscopy ◽  
Dominant Effect ◽  
Band Bending ◽  
X Ray ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

Band Bending at the Gold (Au)/Boron Carbide-Based Semiconductor Interface

2018 ◽  
Vol 232 (5-6) ◽  
pp. 893-905 ◽  
Author(s):  
Elena Echeverría ◽  
George Peterson ◽  
Bin Dong ◽  
Simeon Gilbert ◽  
Adeola Oyelade ◽  
...  
Keyword(s):  
Boron Carbide ◽  
Aromatic Compounds ◽  
Chemical Vapor ◽  
Binding Energies ◽  
Photoemission Spectroscopy ◽  
Semiconductor Interface ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
P Type

Abstract We have used X-ray photoemission spectroscopy to study the interaction of gold (Au) with novel boron carbide-based semiconductors grown by plasma-enhanced chemical vapor deposition (PECVD). Both n- and p-type films have been investigated and the PECVD boron carbides are compared to those containing aromatic compounds. In the case of the p-type semiconducting PECVD hydrogenated boron carbide samples, the binding energy of the B(1s) core level shows a shift to higher binding energies as the Au is deposited, an indication of band bending and possibly Schottky barrier formation. In the case of the n-type boron carbide semiconductors the interaction at the interface is more typical of an ohmic contact. Addition of the aromatic compounds increases the change in binding energies on both n-type and p-type PECVD boron carbide semiconductors, and the gold appears to diffuse into the PECVD boron carbides alloyed with aromatic moieties.

Photoelectron Emission from the Cesiated Diamond (110) Surface

1995 ◽  
Vol 416 ◽  
Author(s):  
C. A. Fox ◽  
M. A. Kelly ◽  
S. B. Hagstrom ◽  
R. Cao ◽  
G. Vergara ◽  
...  
Keyword(s):  
Molecular Oxygen ◽  
Secondary Electron ◽  
Diamond Surface ◽  
Photoemission Spectroscopy ◽  
Negative Electron Affinity ◽  
Photoelectron Emission ◽  
Band Bending ◽  
X Ray ◽  
Low Energy Electron Diffraction ◽  
Low Energy Electron

ABSTRACTCesiation of type IIB diamond (110) crystals was studied using a combination of ultraviolet photoemission spectroscopy, x-ray photoemission spectroscopy, and low energy electron diffraction. The diamond (110) crystal was hydrogen treated by exposure to a hydrogen microwave discharge. Although cesium was largely unreactive with the hydrogenated diamond surface, cesiation yielded a large enhancement in the secondary electron yield of the diamond surface and the negative electron affinity (NEA) condition. An increase in the downwards band bending of approximately 0.75-0.9 eV was inferred from the shift in the valence band edge following cesiation. In addition, (lx 1) LEED patterns were observed at all cesium coverages. Exposure of the cesiated diamond surface to molecular oxygen significantly reduced the NEA peak (relative to the secondary electron background); however, recovery of the NEA peak was observed when the molecular oxygen source was removed.

scholarly journals Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

2013 ◽  
Vol 14 (1) ◽  
pp. 015007 ◽  
Author(s):  
Mickael Lozac'h ◽  
Shigenori Ueda ◽  
Shitao Liu ◽  
Hideki Yoshikawa ◽  
Sang Liwen ◽  
...  
Keyword(s):  
Photoemission Spectroscopy ◽  
Surface Band ◽  
Band Bending ◽  
X Ray

scholarly journals Band bending and dipole effect at interface of metal-nanoparticles and TiO2 directly observed by angular-resolved hard X-ray photoemission spectroscopy

2018 ◽  
Vol 20 (16) ◽  
pp. 11342-11346 ◽  
Author(s):  
Shunsuke Sato ◽  
Keita Kataoka ◽  
Ryosuke Jinnouchi ◽  
Naoko Takahashi ◽  
Keita Sekizawa ◽  
...  
Keyword(s):  
Dipole Moment ◽  
Metal Nanoparticles ◽  
Electric Dipole Moment ◽  
Electric Dipole ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray

Angular-resolved HAXPES elucidated band bending and edge shift are caused by electric dipole moment at interface between metal-nanoparticles and TiO2.

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