scholarly journals Determination of the surface band bending in InxGa1−xN films by hard x-ray photoemission spectroscopy

2013 ◽  
Vol 14 (1) ◽  
pp. 015007 ◽  
Author(s):  
Mickael Lozac'h ◽  
Shigenori Ueda ◽  
Shitao Liu ◽  
Hideki Yoshikawa ◽  
Sang Liwen ◽  
...  
Keyword(s):  
Photoemission Spectroscopy ◽  
Surface Band ◽  
Band Bending ◽  
X Ray

scholarly journals The Degree of Oxidation of Graphene Oxide

Nanomaterials ◽  
2021 ◽  
Vol 11 (3) ◽  
pp. 560
Author(s):  
Alexandra Carvalho ◽  
Mariana C. F. Costa ◽  
Valeria S. Marangoni ◽  
Pei Rou Ng ◽  
Thi Le Hang Nguyen ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Ab Initio ◽  
State Of The Art ◽  
High Accuracy ◽  
Precise Determination ◽  
Photoemission Spectroscopy ◽  
Pristine Graphene ◽  
X Ray ◽  
Degree Of Oxidation

We show that the degree of oxidation of graphene oxide (GO) can be obtained by using a combination of state-of-the-art ab initio computational modeling and X-ray photoemission spectroscopy (XPS). We show that the shift of the XPS C1s peak relative to pristine graphene, ΔEC1s, can be described with high accuracy by ΔEC1s=A(cO−cl)2+E0, where c0 is the oxygen concentration, A=52.3 eV, cl=0.122, and E0=1.22 eV. Our results demonstrate a precise determination of the oxygen content of GO samples.

Controlled Surface Fermi-level on the SeS2-passivated n-GaAs (100)

1998 ◽  
Vol 510 ◽  
Author(s):  
Jing xi Sun ◽  
F. J. Himpsel ◽  
T. F. Kuech
Keyword(s):  
Fermi Level ◽  
Photoemission Spectroscopy ◽  
Ambient Conditions ◽  
Surface Band ◽  
Band Bending ◽  
Term Stability ◽  
Long Term Stability ◽  
Synchrotron Radiation Photoemission ◽  
Surface Fermi Level

AbstractSelenium disulfide surface treatment can unpin the surface Fermi-level on n-GaAs (100) surfaces, resulting in a reduction in the surface band bending. The long-term stability of the surface Fermi-level unpinning has been studied using photoreflectance spectroscopy under room ambient conditions. Our results show that the SeS2-treated n-GaAs (100) surface is stable up to four months with negligible shift in the surface Fermi-level being noted. The mechanism of the long-term stability is attributed to the layered surface structure formed on the SeS2-treated n- GaAs (100) surface. The chemical structure of the passivated surface was determined by synchrotron radiation photoemission spectroscopy. The outermost layer of sulfur and arsenicbased sulfides and selenides may protect the electronic passivating layer, which consists of gallium-based selenides, from interaction with the atmosphere.

Photoemission Studies of the Ag/InP(110) Interface: Interfacial Reactions and Schottky Barrier Formation

1983 ◽  
Vol 25 ◽  
Author(s):  
W. G. Petro ◽  
T. Kendelewicz ◽  
I. A. Babalola ◽  
I. Lindau ◽  
W. E. Spicer
Keyword(s):  
Valence Band Maximum ◽  
Interfacial Reactions ◽  
Core Level ◽  
Photoemission Spectroscopy ◽  
Band Bending ◽  
X Ray ◽  
Barrier Formation ◽  
Deconvolution Technique ◽  
P Type ◽  
Measurable Change

ABSTRACTRoom-temperature interfacial reactions at the Ag/InP (110) interface have been studied using soft x-ray photoemission spectroscopy of the In 4d and P 2p core levels. For low Ag coverages (less than 1 monolayer (ML)) no measurable change in core level shapes is observed, and the shift in core level position is due solely to band bending. At high Ag coverages (up to 72 ML) we observe dissociated In metal, P atoms near the surface, and Ag clustering. Fermi level movement is deduced from these spectra using a deconvolution technique, and pinning positions of 0.40 ± 0.05 eV below the conduction-band minimum for n-type and 0.5 ± 0.l eV above the valence-band maximum for p-type are found. These positions are in close agreement with calculations of native defect levels.

Determination of frontier orbital alignment and band bending at an organic semiconductor heterointerface by combined x-ray and ultraviolet photoemission measurements

1998 ◽  
Vol 73 (8) ◽  
pp. 1026-1028 ◽  
Author(s):  
R. Schlaf ◽  
B. A. Parkinson ◽  
P. A. Lee ◽  
K. W. Nebesny ◽  
N. R. Armstrong
Keyword(s):  
Organic Semiconductor ◽  
Frontier Orbital ◽  
Band Bending ◽  
X Ray

scholarly journals Accurate surface band bending determination on Ga-polar n-type GaN films by fitting x-ray valence band photoemission spectrum

AIP Advances ◽  
2019 ◽  
Vol 9 (11) ◽  
pp. 115106
Author(s):  
Zengli Huang ◽  
Ying Wu ◽  
Yanfei Zhao ◽  
Lin Shi ◽  
Rong Huang ◽  
...  
Keyword(s):  
Valence Band ◽  
Photoemission Spectrum ◽  
Surface Band ◽  
Band Bending ◽  
X Ray

New Electronic Properties of Metal / III-V Compound Semiconductor Interfaces

1989 ◽  
Vol 148 ◽  
Author(s):  
L. J. Brillson ◽  
R. E. Viturro ◽  
S. Chang ◽  
J. L. Shaw ◽  
C. Mailhiot ◽  
...  
Keyword(s):  
Compound Semiconductor ◽  
Photoemission Spectroscopy ◽  
Dominant Effect ◽  
Band Bending ◽  
X Ray ◽  
Barrier Heights ◽  
Semiconductor Interfaces ◽  
Cathodoluminescence Spectroscopy ◽  
Wide Range ◽  
Spectroscopy Studies

ABSTRACTRecent studies of interface states and band bending at metal / III-V compound semiconductor interfaces reveal that these junctions are much more controllable and predictable than commonly believed. Soft x-ray photoemission spectroscopy studies demonstrate a wide range of band bending for metals on many III-V compounds, including GaAs. Cathodoluminescence spectroscopy measurements show that discrete states form at the microscopic junction which can have a dominant effect on the band bending properties. Internal photoemission measurements confirm the bulk barrier heights inferred by photoemission methods. After separating out surface chemical and bulk crystal quality effects, one finds simple, predictive barrier height variations which follow classical Schottky behavior.

Sign in / Sign up

Export Citation Format

Share Document