Charge Pumping Current from Single Si/SiO<sub>2</sub> Interface Traps: Direct Observation of P<sub>b</sub> Centers and Fundamental Trap-Counting by the Charge Pumping Method

(Invited) Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single P b0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory

ECS Meeting Abstracts ◽

10.1149/ma2015-02/29/1088 ◽

2015 ◽

Keyword(s):

Direct Observation ◽

Interface Traps ◽

Charge Pumping

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(Invited) Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory

ECS Transactions ◽

10.1149/06910.0145ecst ◽

2015 ◽

Vol 69 (10) ◽

pp. 145-154

Author(s):

T. Tsuchiya

Keyword(s):

Direct Observation ◽

Interface Traps ◽

Charge Pumping

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Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping

2020 IEEE International Reliability Physics Symposium (IRPS) ◽

10.1109/irps45951.2020.9129513 ◽

2020 ◽

Cited By ~ 1

Author(s):

Bernhard Ruch ◽

Gregor Pobegen ◽

Christian Schleich ◽

Tibor Grasser

Keyword(s):

Interface Traps ◽

Charge Pumping ◽

Hot Carrier

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Comparison between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing near Si-SiO2 Interface Traps

ECS Meeting Abstracts ◽

10.1149/ma2014-01/36/1393 ◽

2014 ◽

Keyword(s):

Interface Traps ◽

Voltage Step ◽

Charge Pumping

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Accurate measurements for lateral distribution of interface traps by charge pumping and capacitance methods

Proceedings of International Electron Devices Meeting ◽

10.1109/iedm.1995.497178 ◽

2002 ◽

Cited By ~ 4

Author(s):

H. Uchida ◽

K. Fukuda ◽

H. Tanaka ◽

N. Hirashita

Keyword(s):

Lateral Distribution ◽

Interface Traps ◽

Charge Pumping

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Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Materials Research Bulletin ◽

10.1016/j.materresbull.2013.05.008 ◽

2013 ◽

Vol 48 (12) ◽

pp. 5084-5087 ◽

Cited By ~ 2

Author(s):

Ho-Myoung An ◽

Hee-Dong Kim ◽

Tae Geun Kim

Keyword(s):

Energy Distribution ◽

Interface Traps ◽

Nand Flash ◽

Charge Pumping ◽

Oxide Degradation

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Detection and characterization of single MOS interface traps by the charge pumping method

2016 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) ◽

10.1109/imfedk.2016.7521662 ◽

2016 ◽

Author(s):

Toshiaki Tsuchiya

Keyword(s):

Interface Traps ◽

Charge Pumping

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Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current

Applied Physics Letters ◽

10.1063/1.4906997 ◽

2015 ◽

Vol 106 (4) ◽

pp. 041603 ◽

Cited By ~ 5

Author(s):

Masahiro Hori ◽

Tokinobu Watanabe ◽

Toshiaki Tsuchiya ◽

Yukinori Ono

Keyword(s):

Direct Observation ◽

Time Domain ◽

Electron Emission ◽

Charge Pumping ◽

Recombination Processes

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Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

IEEE Transactions on Nuclear Science ◽

10.1109/23.211416 ◽

1992 ◽

Vol 39 (6) ◽

pp. 2152-2157 ◽

Cited By ~ 6

Author(s):

W. Chen ◽

A. Balasinski ◽

T.-P. Ma

Keyword(s):

Cross Section ◽

Capture Cross Section ◽

Interface Traps ◽

Capture Cross ◽

Charge Pumping ◽

Radiation Induced

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Charge pumping current from single Si/SiO2interface traps: Direct observation ofPbcenters and fundamental trap-counting by the charge pumping method

Japanese Journal of Applied Physics ◽

10.7567/jjap.54.04dc01 ◽

2015 ◽

Vol 54 (4S) ◽

pp. 04DC01 ◽

Cited By ~ 7

Author(s):

Toshiaki Tsuchiya ◽

Yukinori Ono

Keyword(s):

Direct Observation ◽

Charge Pumping

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Charge Pumping Current from Single Si/SiO2 Interface Traps: Direct Observation of Pb Centers and Fundamental Trap-Counting by the Charge Pumping Method

(Invited) Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single P b0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory

(Invited) Characterization of Individual Si/SiO2 Interface Traps: Direct Observation of Single Pb0 Centers by the Charge Pumping (CP) Method and Correction of the Conventional CP Theory

Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping

Comparison between Equilibrium Voltage Step and Charge Pumping Techniques for Characterizing near Si-SiO2 Interface Traps

Accurate measurements for lateral distribution of interface traps by charge pumping and capacitance methods

Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Detection and characterization of single MOS interface traps by the charge pumping method

Direct observation of electron emission and recombination processes by time domain measurements of charge pumping current

Evolution of capture cross-section of radiation-induced interface traps in MOSFETs as studied by a rapid charge pumping technique

Charge pumping current from single Si/SiO2interface traps: Direct observation ofPbcenters and fundamental trap-counting by the charge pumping method

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