Excitation Kinetics of Impurity Doped Quantum Dot Triggered by Gaussian White Noise

We investigate the excitation kinetics of a repulsive impurity doped quantum dot initiated by the application of Gaussian white noise. In view of a comprehensive research we have considered both additive and multiplicative noise (in Stratonovich sense). The noise strength and the dopant location have been found to fabricate the said kinetics in a delicate way. Moreover, the influences of additive and multiplicative nature of the noise on the excitation kinetics have been observed to be prominently different. The investigation reveals emergence of maximization and saturation in the excitation kinetics as a result of complex interplay between various parameters that affect the kinetics. The present investigation is believed to provide some useful perceptions of the functioning of mesoscopic systems where noise plays some profound role.

Influence of Oscillatory Impurity Potential and Concurrent Gasping of Impurity Spread on Excitation Profile of Doped Quantum Dots

Excitation in quantum dots is an important phenomenon. Realizing the importance we investigate the excitation behavior of a repulsive impurity-doped quantum dot induced by simultaneous oscillations of impurity potential and spatial stretch of impurity domain. The impurity potential has been assumed to have a Gaussian nature. The ratio of two oscillations (η) has been exploited to understand the nature of excitation rate. Indeed it has been found that the said ratio could fabricate the excitation in a remarkable way. The present study also indicates attainment of stabilization in the excitation rate as soon as η surpasses a threshold value regardless of the dopant location. However, within the stabilization zone we also observe maximization in the excitation rate at some typical location of dopant incorporation. The critical analysis of pertinent impurity parameters provides important perception about the physics behind the excitation process.