scholarly journals Конструкции блокирующих слоев для подавления паразитной рекомбинации в мощных диодных лазерах с GaAs волноводом

2022 ◽  
Vol 56 (3) ◽  
pp. 363
Author(s):  
М.Е. Муретова ◽  
Ф.И. Зубов ◽  
Л.В. Асрян ◽  
Ю.М. Шерняков ◽  
М.В. Максимов ◽  
...  
Keyword(s):  
Resonant Tunneling ◽  
Electron Flow ◽  
Optimal Designs ◽  
Initial Value ◽  
Barrier Layers ◽  
Spontaneous Recombination ◽  
Resonant States ◽  
Recombination Current ◽  
Alternative Structure ◽  
Equal Thickness

Using numerical simulation, a search is carried out for designs of asymmetric barrier layers (ABLs) for a laser diode having GaAs waveguide and emitting at the wavelength λ = 980 nm. A pair of ABLs, adjoining the active region on both sides, blocks undesired charge carrier flows and suppresses parasitic spontaneous recombination in the waveguide layers. Optimal designs of ABLs based on AlGaAsSb and GaInP for blocking electrons and holes, respectively, are proposed that make it possible to reduce the parasitic recombination current down to less than 1% of the initial value. To suppress electron transport, an alternative structure based on three identical AlInAs barriers is also proposed. The GaAsP spacers separating these barriers from each other have different thicknesses. Due to this, its own set of quasi-bound (resonant) states is formed in each spacer that is different from the neighbor spacer set of states. As a result of this, the resonant tunneling channels are blocked: the parasitic electron flow is reduced by several tens of times in comparison with the case of spacers of equal thickness.

RESONANT TUNNELING IN SEMICONDUCTOR MULTIBARRIER HETEROSTRUCTURES

2002 ◽  
Vol 16 (30) ◽  
pp. 4607-4619 ◽  
Author(s):  
JIAN GONG ◽  
SHI LIANG BAN ◽  
XI XIA LIANG
Keyword(s):  
Resonant Tunneling ◽  
Mixed Crystal ◽  
Coupling Effect ◽  
Tunneling Current ◽  
Transverse Motion ◽  
Longitudinal Motion ◽  
Zero Bias ◽  
Resonant States ◽  
Dimensional Approximation ◽  
Peak To Valley Ratio

The effect of coupling between the electronic transverse motion and longitudinal motion is considered in the theoretical investigation of the resonant tunneling in a semiconductor multi-barriers heterostructure. A numerical calculation is carried out for rectangular and parabolic-well heterostructures consisting of ZnSe/Zn 1-x Cd x Se . The result indicates that the coupling effect results in not only a movement of the resonant peaks but also a reduction of the peak-to-valley ratio in the transmission spectrum. The effect of the electronic transverse motion on the higher-lying resonant states for the resonant tunneling is more remarkable for both the zero and non-zero bias voltages. The J-V characteristic formula of tunneling current density, which is different from Esaki's result, is given by using a two-dimensional approximation. The influence of temperature and mixed crystal effect on the J-V characteristic is also investigated.

scholarly journals Проявления процессов резонансного туннелирования и случайных флуктуаций потенциала с участием уровней квантовых точек в релаксации фототока p-i-n GaAs/AlAs-гетероструктур

2021 ◽  
Vol 55 (10) ◽  
pp. 950
Author(s):  
Ю.Н. Ханин ◽  
Е.Е. Вдовин
Keyword(s):  
Quantum Dots ◽  
Resonant Tunneling ◽  
Charge Accumulation ◽  
Time Intervals ◽  
Long Wavelength ◽  
Barrier Layers ◽  
Local Fluctuations ◽  
Relaxation Curves ◽  
Random Fluctuations ◽  
Wavelength Light

As a result of studying the relaxation of the photocurrent in p-i-n GaAs / AlAs heterostructures, we discovered/ registered sharp features caused by resonant tunneling through the electronic levels of quantum dots in the barrier layers. It was shown that the time intervals of the manifestation of these resonances on the relaxation curves are determined by the dynamics of charge accumulation at the hole levels of quantum dots and by recombination with their participation.Strong random fluctuations of the photocurrent in the postresonant region, caused by local fluctuations of the residual charge at the hole levels of quantum dots, were also found.The study of relaxation in the medium and long wavelength light ranges confirms our interpretation of the observed effects.

Via Electromigration Related Functional Failure—A Case Study

2004 ◽  
Author(s):  
Vijay Chowdhury
Keyword(s):  
Material Flow ◽  
Weak Link ◽  
Electron Flow ◽  
Functional Failure ◽  
Barrier Layers ◽  
Weakest Link ◽  
Flow Through ◽  
Interconnect Lines ◽  
Interconnect System

Abstract Specialized structures have been developed to understand how interconnect and via would link together in a circuit to bring out the weakest link in the interconnect-via system. This article reports a phenomenon where electromigration occurred in an actual circuit with signal lines connected by individual vias. A prediction is made into the weak link in the via-Interconnect system based on real time product. In the interconnect-via system used, the TiW barrier blocked the material flow from M2 to Ml. W plugs would block the material flow as they do with the barrier layers and the failures would occur at the via to interconnect interface as noticed in this case. Depending on the electron flow through the via, the material will either accumulate at the via-interconnect interface, which will induce inter-metal dielectric cracks, or deplete, causing discontinuity (opens) of the interconnect lines.

Spontaneous recombination current in InGaAs/GaAs quantum well lasers

1990 ◽  
Vol 57 (15) ◽  
pp. 1482-1484 ◽  
Author(s):  
P. Blood ◽  
E. D. Fletcher ◽  
K. Woodbridge ◽  
M. Vening
Keyword(s):  
Quantum Well ◽  
Quantum Well Lasers ◽  
Spontaneous Recombination ◽  
Recombination Current

Spacings and Intensities of Weak-Beam Dark Field Thickness Fringes

1981 ◽  
Vol 39 ◽  
pp. 222-223
Author(s):  
M. Avalos-Borja ◽  
K. Heinemann
Keyword(s):  
Selection Criterion ◽  
Dark Field ◽  
Dynamical Theory ◽  
Bragg Condition ◽  
Weak Beam ◽  
Kinematical Theory ◽  
Equal Thickness

Weak-beam dark field (WBDF) TEM produces narrowly spaced equal-thickness fringes in wedge-shaped crystals. Using non-systematic diffraction conditions, we have shown elsewhere that simple 2-beam kinematical theory (KT) calculations yield average fringe spacings that are for most practical purposes as satisfactorily accurate as the average spacings obtained from optimized multibeam dynamical theory (DT) calculations, As Fig. 1 shows, this result holds for deviations from the Bragg condition as low as 2x10-1 nm-1, and the differences between the results from the two calculational methods become increasingly insignificant for larger excitation errors. (Unless otherwise noted, all results reported here are for gold crystals, using the 200 beam at 100 KV; the DT calculations were made for 74 beams, using the selection criterion D as discussed in ref. [3]).

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